Reliability and gate conduction variability of HfO2-based MOS devices: a combined nanoscale and device level study.

A. Bayerl, M. Lanza, M. Porti, F. Campabadal, M. Nafría, X. Aymerich, G. Benstetter

Research output: Contribution to journalArticleResearch

5 Citations (Scopus)
Original languageEnglish
Pages (from-to)1334-1337
JournalMicroelectronic Engineering
Volume88
Issue number7
DOIs
Publication statusPublished - 1 Jan 2011

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