Reliability and gate conduction variability of HfO2-based MOS devices: a combined nanoscale and device level study.

A. Bayerl, M. Lanza, M. Porti, F. Campabadal, M. Nafría, X. Aymerich, G. Benstetter

Research output: Contribution to journal › Article › Research › peer-review

6 Citations (Scopus)

Original language	English
Pages (from-to)	1334-1337
Journal	Microelectronic Engineering
Volume	88
Issue number	7
DOIs	https://doi.org/10.1016/j.mee.2011.03.122
Publication status	Published - 1 Jan 2011

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title = "Reliability and gate conduction variability of HfO2-based MOS devices: a combined nanoscale and device level study.",

author = "A. Bayerl and M. Lanza and M. Porti and F. Campabadal and M. Nafr{\'i}a and X. Aymerich and G. Benstetter",

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T1 - Reliability and gate conduction variability of HfO2-based MOS devices: a combined nanoscale and device level study.

AU - Bayerl, A.

AU - Lanza, M.

AU - Porti, M.

AU - Campabadal, F.

AU - Nafría, M.

AU - Aymerich, X.

AU - Benstetter, G.

PY - 2011/1/1

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U2 - 10.1016/j.mee.2011.03.122

DO - 10.1016/j.mee.2011.03.122

M3 - Article

SN - 0167-9317

VL - 88

SP - 1334

EP - 1337

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 7

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