Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments

F. Kail, J. Farjas, P. Roura, C. Secouard, O. Nos, J. Bertomeu, F. Alzina, P. Roca I Cabarrocas

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    7 Citations (Scopus)

    Abstract

    The structural relaxation of pure amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) materials, that occurs during thermal annealing experiments, has been analyzed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon. © 2010 American Institute of Physics.
    Original languageEnglish
    Article number031918
    JournalApplied Physics Letters
    Volume97
    Issue number3
    DOIs
    Publication statusPublished - 19 Jul 2010

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