Reduction of the transverse effective charge of optical phonons in ZnO under pressure

J. S. Reparaz; L. R. Muniz; M. R. Wagner; A. R. Goñi; M. I. Alonso; A. Hoffmann; B. K. Meyer

doi:10.1063/1.3447798

Reduction of the transverse effective charge of optical phonons in ZnO under pressure

J. S. Reparaz, L. R. Muniz, M. R. Wagner, A. R. Goñi, M. I. Alonso, A. Hoffmann, B. K. Meyer

Research output: Contribution to journal › Article › Research › peer-review

40 Citations (Scopus)

Abstract

From Raman scattering on a-plane wurtzite ZnO crystals we obtained a decreasing splitting between longitudinal and transversal optical phonons with A1 and E1 symmetry as a function of hydrostatic pressure up to 5.5 GPa. Consequently, the transverse effective charge (e*T) exhibits a strong reduction with increasing pressure, yielding 2.17-14.6× 10-3 P/GPa and 2.04-13.7× 10-3 P/GPa (in units of the elementary charge) for the A1 and E1 phonons, respectively. We find a clear systematic in the linear pressure coefficient of e*T with bond polarity for the series of wide-band gap semiconductors SiC, AlN, GaN, and ZnO. © 2010 American Institute of Physics.

Original language	English
Article number	231906
Journal	Applied Physics Letters
Volume	96
Issue number	23
DOIs	https://doi.org/10.1063/1.3447798
Publication status	Published - 18 Jun 2010

Access to Document

10.1063/1.3447798

Cite this

@article{9881e43dc24244e1a2f0d916bbe5ad50,

title = "Reduction of the transverse effective charge of optical phonons in ZnO under pressure",

abstract = "From Raman scattering on a-plane wurtzite ZnO crystals we obtained a decreasing splitting between longitudinal and transversal optical phonons with A1 and E1 symmetry as a function of hydrostatic pressure up to 5.5 GPa. Consequently, the transverse effective charge (e*T) exhibits a strong reduction with increasing pressure, yielding 2.17-14.6× 10-3 P/GPa and 2.04-13.7× 10-3 P/GPa (in units of the elementary charge) for the A1 and E1 phonons, respectively. We find a clear systematic in the linear pressure coefficient of e*T with bond polarity for the series of wide-band gap semiconductors SiC, AlN, GaN, and ZnO. {\textcopyright} 2010 American Institute of Physics.",

author = "Reparaz, {J. S.} and Muniz, {L. R.} and Wagner, {M. R.} and Go{\~n}i, {A. R.} and Alonso, {M. I.} and A. Hoffmann and Meyer, {B. K.}",

year = "2010",

month = jun,

day = "18",

doi = "10.1063/1.3447798",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - Reduction of the transverse effective charge of optical phonons in ZnO under pressure

AU - Reparaz, J. S.

AU - Muniz, L. R.

AU - Wagner, M. R.

AU - Goñi, A. R.

AU - Alonso, M. I.

AU - Hoffmann, A.

AU - Meyer, B. K.

PY - 2010/6/18

Y1 - 2010/6/18

N2 - From Raman scattering on a-plane wurtzite ZnO crystals we obtained a decreasing splitting between longitudinal and transversal optical phonons with A1 and E1 symmetry as a function of hydrostatic pressure up to 5.5 GPa. Consequently, the transverse effective charge (e*T) exhibits a strong reduction with increasing pressure, yielding 2.17-14.6× 10-3 P/GPa and 2.04-13.7× 10-3 P/GPa (in units of the elementary charge) for the A1 and E1 phonons, respectively. We find a clear systematic in the linear pressure coefficient of e*T with bond polarity for the series of wide-band gap semiconductors SiC, AlN, GaN, and ZnO. © 2010 American Institute of Physics.

AB - From Raman scattering on a-plane wurtzite ZnO crystals we obtained a decreasing splitting between longitudinal and transversal optical phonons with A1 and E1 symmetry as a function of hydrostatic pressure up to 5.5 GPa. Consequently, the transverse effective charge (e*T) exhibits a strong reduction with increasing pressure, yielding 2.17-14.6× 10-3 P/GPa and 2.04-13.7× 10-3 P/GPa (in units of the elementary charge) for the A1 and E1 phonons, respectively. We find a clear systematic in the linear pressure coefficient of e*T with bond polarity for the series of wide-band gap semiconductors SiC, AlN, GaN, and ZnO. © 2010 American Institute of Physics.

U2 - 10.1063/1.3447798

DO - 10.1063/1.3447798

M3 - Article

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

M1 - 231906

ER -

Reduction of the transverse effective charge of optical phonons in ZnO under pressure

Abstract

Access to Document

Fingerprint

Cite this