Reduction of the transverse effective charge of optical phonons in ZnO under pressure

J. S. Reparaz, L. R. Muniz, M. R. Wagner, A. R. Goñi, M. I. Alonso, A. Hoffmann, B. K. Meyer

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    Abstract

    From Raman scattering on a-plane wurtzite ZnO crystals we obtained a decreasing splitting between longitudinal and transversal optical phonons with A1 and E1 symmetry as a function of hydrostatic pressure up to 5.5 GPa. Consequently, the transverse effective charge (e*T) exhibits a strong reduction with increasing pressure, yielding 2.17-14.6× 10-3 P/GPa and 2.04-13.7× 10-3 P/GPa (in units of the elementary charge) for the A1 and E1 phonons, respectively. We find a clear systematic in the linear pressure coefficient of e*T with bond polarity for the series of wide-band gap semiconductors SiC, AlN, GaN, and ZnO. © 2010 American Institute of Physics.
    Original languageEnglish
    Article number231906
    JournalApplied Physics Letters
    Volume96
    Issue number23
    DOIs
    Publication statusPublished - 18 Jun 2010

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