Recovery of the mosfet and circuit functionality after the dielectric breakdown of ultrathin high-κ gate stacks

A. Crespo-Yepes; J. Martin-Martinez; A. Rothschild; R. Rodriguez; M. Nafria; X. Aymerich

doi:https://doi.org/10.1109/LED.2010.2045732

Recovery of the mosfet and circuit functionality after the dielectric breakdown of ultrathin high-κ gate stacks

A. Crespo-Yepes, J. Martin-Martinez, A. Rothschild, R. Rodriguez, M. Nafria, X. Aymerich

Research output: Contribution to journal › Article › Research › peer-review

17 Citations (Scopus)

Abstract

The reversibility of the gate dielectric breakdown (DB) in ultrathin high-κ dielectric stacks is reported and analyzed. The electrical performance of MOSFETs after the dielectric recovery is modeled and introduced in a circuit simulator. The simulation of several digital circuits shows that their functionality can be restored after the DB recovery. © 2006 IEEE.

Original language	English
Article number	5451150
Pages (from-to)	543-545
Journal	IEEE Electron Device Letters
Volume	31
DOIs	https://doi.org/10.1109/LED.2010.2045732
Publication status	Published - 1 Jun 2010

Keywords

CMOS circuits
DB reversibility
Dielectric breakdown (DB)
High-κ
Resistive switching

Access to Document

https://doi.org/10.1109/LED.2010.2045732

Fingerprint Dive into the research topics of 'Recovery of the mosfet and circuit functionality after the dielectric breakdown of ultrathin high-κ gate stacks'. Together they form a unique fingerprint.

Cite this

Crespo-Yepes, A., Martin-Martinez, J., Rothschild, A., Rodriguez, R., Nafria, M., & Aymerich, X. (2010). Recovery of the mosfet and circuit functionality after the dielectric breakdown of ultrathin high-κ gate stacks. IEEE Electron Device Letters, 31, 543-545. [5451150]. https://doi.org/10.1109/LED.2010.2045732

@article{b6f7e7cc3209491fa8dcb0f6af9ed4f2,

title = "Recovery of the mosfet and circuit functionality after the dielectric breakdown of ultrathin high-κ gate stacks",

abstract = "The reversibility of the gate dielectric breakdown (DB) in ultrathin high-κ dielectric stacks is reported and analyzed. The electrical performance of MOSFETs after the dielectric recovery is modeled and introduced in a circuit simulator. The simulation of several digital circuits shows that their functionality can be restored after the DB recovery. {\textcopyright} 2006 IEEE.",

keywords = "CMOS circuits, DB reversibility, Dielectric breakdown (DB), High-κ, Resistive switching",

author = "A. Crespo-Yepes and J. Martin-Martinez and A. Rothschild and R. Rodriguez and M. Nafria and X. Aymerich",

year = "2010",

month = jun,

day = "1",

doi = "https://doi.org/10.1109/LED.2010.2045732",

language = "English",

volume = "31",

pages = "543--545",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Recovery of the mosfet and circuit functionality after the dielectric breakdown of ultrathin high-κ gate stacks

AU - Crespo-Yepes, A.

AU - Martin-Martinez, J.

AU - Rothschild, A.

AU - Rodriguez, R.

AU - Nafria, M.

AU - Aymerich, X.

PY - 2010/6/1

Y1 - 2010/6/1

N2 - The reversibility of the gate dielectric breakdown (DB) in ultrathin high-κ dielectric stacks is reported and analyzed. The electrical performance of MOSFETs after the dielectric recovery is modeled and introduced in a circuit simulator. The simulation of several digital circuits shows that their functionality can be restored after the DB recovery. © 2006 IEEE.

AB - The reversibility of the gate dielectric breakdown (DB) in ultrathin high-κ dielectric stacks is reported and analyzed. The electrical performance of MOSFETs after the dielectric recovery is modeled and introduced in a circuit simulator. The simulation of several digital circuits shows that their functionality can be restored after the DB recovery. © 2006 IEEE.

KW - CMOS circuits

KW - DB reversibility

KW - Dielectric breakdown (DB)

KW - High-κ

KW - Resistive switching

U2 - https://doi.org/10.1109/LED.2010.2045732

DO - https://doi.org/10.1109/LED.2010.2045732

M3 - Article

VL - 31

SP - 543

EP - 545

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

M1 - 5451150

ER -