Recovery of the mosfet and circuit functionality after the dielectric breakdown of ultrathin high-κ gate stacks

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Abstract

The reversibility of the gate dielectric breakdown (DB) in ultrathin high-κ dielectric stacks is reported and analyzed. The electrical performance of MOSFETs after the dielectric recovery is modeled and introduced in a circuit simulator. The simulation of several digital circuits shows that their functionality can be restored after the DB recovery. © 2006 IEEE.
Original languageEnglish
Article number5451150
Pages (from-to)543-545
JournalIEEE Electron Device Letters
Volume31
DOIs
Publication statusPublished - 1 Jun 2010

Keywords

  • CMOS circuits
  • DB reversibility
  • Dielectric breakdown (DB)
  • High-κ
  • Resistive switching

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