Recovery of the mosfet and circuit functionality after the dielectric breakdown of ultrathin high-κ gate stacks

A. Crespo-Yepes; J. Martin-Martinez; A. Rothschild; R. Rodriguez; M. Nafria; X. Aymerich

doi:https://doi.org/10.1109/LED.2010.2045732

Recovery of the mosfet and circuit functionality after the dielectric breakdown of ultrathin high-κ gate stacks

A. Crespo-Yepes, J. Martin-Martinez, A. Rothschild, R. Rodriguez, M. Nafria, X. Aymerich

Research output: Contribution to journal › Article › Research › peer-review

17 Citations (Scopus)

Abstract

The reversibility of the gate dielectric breakdown (DB) in ultrathin high-κ dielectric stacks is reported and analyzed. The electrical performance of MOSFETs after the dielectric recovery is modeled and introduced in a circuit simulator. The simulation of several digital circuits shows that their functionality can be restored after the DB recovery. © 2006 IEEE.

Original language	English
Article number	5451150
Pages (from-to)	543-545
Journal	IEEE Electron Device Letters
Volume	31
DOIs	https://doi.org/10.1109/LED.2010.2045732
Publication status	Published - 1 Jun 2010

Keywords

CMOS circuits
DB reversibility
Dielectric breakdown (DB)
High-κ
Resistive switching

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https://doi.org/10.1109/LED.2010.2045732

https://ddd.uab.cat/record/138451

Cite this

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abstract = "The reversibility of the gate dielectric breakdown (DB) in ultrathin high-κ dielectric stacks is reported and analyzed. The electrical performance of MOSFETs after the dielectric recovery is modeled and introduced in a circuit simulator. The simulation of several digital circuits shows that their functionality can be restored after the DB recovery. {\textcopyright} 2006 IEEE.",

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AU - Martin-Martinez, J.

AU - Rothschild, A.

AU - Rodriguez, R.

AU - Nafria, M.

AU - Aymerich, X.

PY - 2010/6/1

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AB - The reversibility of the gate dielectric breakdown (DB) in ultrathin high-κ dielectric stacks is reported and analyzed. The electrical performance of MOSFETs after the dielectric recovery is modeled and introduced in a circuit simulator. The simulation of several digital circuits shows that their functionality can be restored after the DB recovery. © 2006 IEEE.

KW - CMOS circuits

KW - DB reversibility

KW - Dielectric breakdown (DB)

KW - High-κ

KW - Resistive switching

U2 - https://doi.org/10.1109/LED.2010.2045732

DO - https://doi.org/10.1109/LED.2010.2045732

M3 - Article

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SP - 543

EP - 545

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

M1 - 5451150

ER -

Recovery of the mosfet and circuit functionality after the dielectric breakdown of ultrathin high-κ gate stacks

Abstract

Keywords

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