The reversibility of the gate dielectric breakdown (DB) in ultrathin high-κ dielectric stacks is reported and analyzed. The electrical performance of MOSFETs after the dielectric recovery is modeled and introduced in a circuit simulator. The simulation of several digital circuits shows that their functionality can be restored after the DB recovery. © 2006 IEEE.
- CMOS circuits
- DB reversibility
- Dielectric breakdown (DB)
- Resistive switching
Crespo-Yepes, A., Martin-Martinez, J., Rothschild, A., Rodriguez, R., Nafria, M., & Aymerich, X. (2010). Recovery of the mosfet and circuit functionality after the dielectric breakdown of ultrathin high-κ gate stacks. IEEE Electron Device Letters, 31, 543-545. . https://doi.org/10.1109/LED.2010.2045732