Abstract
The reversibility of the gate dielectric breakdown (DB) in ultrathin high-κ dielectric stacks is reported and analyzed. The electrical performance of MOSFETs after the dielectric recovery is modeled and introduced in a circuit simulator. The simulation of several digital circuits shows that their functionality can be restored after the DB recovery. © 2006 IEEE.
Original language | English |
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Article number | 5451150 |
Pages (from-to) | 543-545 |
Journal | IEEE Electron Device Letters |
Volume | 31 |
DOIs | |
Publication status | Published - 1 Jun 2010 |
Keywords
- CMOS circuits
- DB reversibility
- Dielectric breakdown (DB)
- High-κ
- Resistive switching