Raman study of self-assembled SiGe nanoislands grown at low temperatures

M. Ya Valakh, V. O. Yukhymchuk, V. M. Dzhagan, O. S. Lytvyn, A. G. Milekhin, A. I. Nikiforov, O. P. Pchelyakov, F. Alsina, J. Pascual

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24 Citations (Scopus)

Abstract

We report on Raman scattering measurements on Si-capped Ge quantum structures grown by molecular beam epitaxy on Si(001) at low temperatures. We find a double band structure in the Ge-Ge frequency range for nanoislands grown at substrate temperatures ranging in the interval 300-500 °C. Complementary information has been obtained from performing Raman scattering experiments on annealed samples. The results are interpreted in terms of a model that considers quantum structures (hut clusters) composed of a strained Ge core and a more relaxed SiGe shell. © 2005 IOP Publishing Ltd.
Original languageEnglish
Pages (from-to)1464-1468
JournalNanotechnology
Volume16
DOIs
Publication statusPublished - 1 Sep 2005

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