Raman investigation of implantation damage induced by nitrogen and phosphorus ions in 6H-SiC

Translated title of the contribution: Raman investigation of implantation damage induced by nitrogen and phosphorus ions in 6H-SiC

J. Camassel, S. Blanque, P. Godignon, N. Mestres, J. Pascual

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Translated title of the contributionRaman investigation of implantation damage induced by nitrogen and phosphorus ions in 6H-SiC
Original languageMultiple languages
Pages (from-to)1-1
JournalJ. Phys., IV
Publication statusPublished - 1 Jan 2003

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