In this work, we demonstrate that the limitations of previous simulation tools for resonant tunneling diodes based on the Wigner function approach, can be overcome by coupling a classical Monte Carlo solver to the quantum Liouville equation, the former being applied to regions far enough from the double barrier, where quantum effects are not present. This allows us to extend the simulation domains up to hundreds of nanometers, without paying a penalty in computational burden. It is shown that this large domains are necessary to obtain an accurate description of device behavior. By using physical parameters corresponding to those of actual devices, we have found current oscillations and a plateaulike behavior in the negative conductance region in accordance to experimental I-V characteristics obtained on resonant tunneling diodes. © 1999 Publication Board, Japanese Journal of Applied Physics.
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 B|
|Publication status||Published - 1 Dec 1999|
- III-IV devices
- Quantum devices
- Quantum Monte Carlo