Quantum Monte Carlo Simulation of tunneling devices Using Bohm trajectories: Proceeding of the 10th int. conf. On Nonequilibrium carrier Dynamics in Semiconductors (HCIS'10).

X Oriols; J García; F Martin; J Suñé; T Gonzalez; J Mateos; D Pardo

Quantum Monte Carlo Simulation of tunneling devices Using Bohm trajectories: Proceeding of the 10th int. conf. On Nonequilibrium carrier Dynamics in Semiconductors (HCIS'10).

X Oriols, J García, F Martin, J Suñé, T Gonzalez, J Mateos, D Pardo

Research output: Book/Report › Proceeding › Research

Original language	Undefined/Unknown
Place of Publication	- (DE)
Number of pages	1
Publication status	Published - Jul 1997

Cite this

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title = "Quantum Monte Carlo Simulation of tunneling devices Using Bohm trajectories: Proceeding of the 10th int. conf. On Nonequilibrium carrier Dynamics in Semiconductors (HCIS'10).",

author = "X Oriols and J Garc{\'i}a and F Martin and J Su{\~n}{\'e} and T Gonzalez and J Mateos and D Pardo",

year = "1997",

month = jul,

language = "Indefinido/desconocido",

}

TY - BOOK

T1 - Quantum Monte Carlo Simulation of tunneling devices Using Bohm trajectories

T2 - Proceeding of the 10th int. conf. On Nonequilibrium carrier Dynamics in Semiconductors (HCIS'10).

AU - Oriols, X

AU - García, J

AU - Martin, F

AU - Suñé, J

AU - Gonzalez, T

AU - Mateos, J

AU - Pardo, D

PY - 1997/7

Y1 - 1997/7

M3 - Libro de Actas

BT - Quantum Monte Carlo Simulation of tunneling devices Using Bohm trajectories

CY - - (DE)

ER -