Quantum mechanical effects on noise properties of nanoelectronic devices: Application to Monte Carlo simulation

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Abstract

A discussion about the quantum mechanical effects on noise properties of ballistic (phase-coherent) nanoscale devices is presented. It is shown that quantum noise can be understood in terms of quantum trajectories. This interpretation provides a simple and intuitive explanation of the origin of quantum noise that can be very salutary for nanoelectronic engineers. In particular, an injection model is presented that, coupled with a standard Monte Carlo algorithm, provides an accurate modeling of quantum noise. As a test, the standard results of noise in tunneling junction devices are reproduced within this approach.
Original languageEnglish
Pages (from-to)1830-1836
JournalIEEE Transactions on Electron Devices
Volume50
DOIs
Publication statusPublished - 1 Sep 2003

Keywords

  • Monte Carlo methods
  • Nanotechnology
  • Noise
  • Semiconductor devices

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