Quantum effects in accumulated MOS thin dielectric structures

Piero Olivo, Jordi Suñé

Research output: Contribution to journalArticleResearchpeer-review

5 Citations (Scopus)

Abstract

The role of quantum effects, strongly modifying the physics of SiSiO2 interfaces in accumulated thin-oxide MOS structures, is reviewed and discussed. The main differences with respect to the classical case are analysed: in particular, it is shown that the semiconductor voltage drop and the oxide barrier height for Fowler-Nordheim tunnel injection are largely modified by the quantization of the accumulation layers. The dependence of the barrier height on the oxide field has a remarkable impact on the modelling of thin oxides: in particular, the Fowler-Nordheim current is shown to be correctly estimated only if quantum effects are correctly taken into account. © 1994.
Original languageEnglish
Pages (from-to)523-531
JournalMicroelectronics Journal
Volume25
DOIs
Publication statusPublished - 1 Jan 1994

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