Quantitative two-step hydrogen model of SiO2 Gate Oxide Breakdown

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@article{bd8e59282fd7400b93856073e72b427b,

title = "Quantitative two-step hydrogen model of SiO2 Gate Oxide Breakdown",

author = "J. Su{\~n}{\'e} and E. Wu",

year = "2002",

month = jan,

day = "1",

doi = "10.1016/S0038-1101(02)00156-9",

language = "English",

volume = "46",

pages = "1825--1837",

journal = "Solid-state electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

}