A study of reversible capture and emission processes of fabrication-caused interface and oxide traps in a carbon nanotube fet (cntfet) is performed. Drain-current-based measurement techniques are employed to investigate both the trap-related capture (fill) and the emission (release) process of these emerging three-terminal devices. The measurement techniques are based upon the systematic evaluation of the trap-induced time-dependent lateral shifts of periodically measured complete I d -V gs curves. The techniques are conceptually demonstrated by means of transient simulations with a cntfet compact model containing a trap modeling adjunct network with different time constants for capture and emission of traps. Subsequently, the techniques are experimentally applied to a cntfet using dedicated laboratory equipment.