Propagation of the SiO2 breakdown event on MOS structures observed with conductive atomic force microscopy

M. Porti, M. Nafría, X. Aymerich, A. Olbrich, B. Ebersberger

Research output: Contribution to journal › Article › Research

Original language	English
Pages (from-to)	265-269
Journal	Microelectronic Engineering
Volume	59
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-9317(01)00608-6
Publication status	Published - 1 Jan 2001

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title = "Propagation of the SiO2 breakdown event on MOS structures observed with conductive atomic force microscopy",

author = "M. Porti and M. Nafr{\'i}a and X. Aymerich and A. Olbrich and B. Ebersberger",

year = "2001",

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T1 - Propagation of the SiO2 breakdown event on MOS structures observed with conductive atomic force microscopy

AU - Porti, M.

AU - Nafría, M.

AU - Aymerich, X.

AU - Olbrich, A.

AU - Ebersberger, B.

PY - 2001/1/1

Y1 - 2001/1/1

U2 - 10.1016/S0167-9317(01)00608-6

DO - 10.1016/S0167-9317(01)00608-6

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SP - 265

EP - 269

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 1-4

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