Original language | English |
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Pages (from-to) | 265-269 |
Journal | Microelectronic Engineering |
Volume | 59 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 1 Jan 2001 |
Propagation of the SiO2 breakdown event on MOS structures observed with conductive atomic force microscopy
M. Porti, M. Nafría, X. Aymerich, A. Olbrich, B. Ebersberger
Research output: Contribution to journal › Article › Research
18
Citations
(Scopus)