Progressive breakdown dynamics and entropy production in ultrathin SiO <inf>2</inf> gate oxides

E. Miranda; D. Jiḿnez; J. Sú

doi:https://doi.org/10.1063/1.3602318

Progressive breakdown dynamics and entropy production in ultrathin SiO <inf>2</inf> gate oxides

E. Miranda, D. Jiḿnez, J. Sú

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2 Citations (Scopus)

Abstract

The progressive breakdown of ultrathin (≈2nm) SiO2 gate oxides subjected to constant electrical stress is investigated using a simple equivalent circuit model. It is shown how the interplay among series, parallel, and filamentary conductances that represent the breakdown path and its surroundings leads under certain hypothesis to a sigmoidal current-time characteristic compatible with the experimental observations. The dynamical properties of the breakdown trajectories are analyzed in terms of the logistic potential function, the Lyapunov exponent, and the system's attractor. It is also shown that the current evolution is compatible with Prigogine's minimum entropy production principle. © 2011 American Institute of Physics.

Original language	English
Article number	253504
Journal	Applied Physics Letters
Volume	98
DOIs	https://doi.org/10.1063/1.3602318
Publication status	Published - 20 Jun 2011

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AU - Sú, J.

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AB - The progressive breakdown of ultrathin (≈2nm) SiO2 gate oxides subjected to constant electrical stress is investigated using a simple equivalent circuit model. It is shown how the interplay among series, parallel, and filamentary conductances that represent the breakdown path and its surroundings leads under certain hypothesis to a sigmoidal current-time characteristic compatible with the experimental observations. The dynamical properties of the breakdown trajectories are analyzed in terms of the logistic potential function, the Lyapunov exponent, and the system's attractor. It is also shown that the current evolution is compatible with Prigogine's minimum entropy production principle. © 2011 American Institute of Physics.

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Progressive breakdown dynamics and entropy production in ultrathin SiO <inf>2</inf> gate oxides

Abstract

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