Proc. of the IEEE International Reliability Physics Symposium (IRPS). "Switching Behavior of the Soft Breakdown Conduction Characteristic in Ultrathin (<5nm) Oxide MOS Capacitors". IEEE International Reliability Physics Symposium (IRPS).

E. MIranda, R. Rodríguez, M. Nafría, J. Suñé, X. Aymerich, - (Editor)

Research output: Book/ReportProceedingResearch

Original languageUndefined/Unknown
Place of PublicationReno (US)
Number of pages5
Publication statusPublished - Jun 1998

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