Original language | Undefined/Unknown |
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Place of Publication | Reno (US) |
Number of pages | 5 |
Publication status | Published - Jun 1998 |
Proc. of the IEEE International Reliability Physics Symposium (IRPS). "Switching Behavior of the Soft Breakdown Conduction Characteristic in Ultrathin (<5nm) Oxide MOS Capacitors". IEEE International Reliability Physics Symposium (IRPS).
E. MIranda, R. Rodríguez, M. Nafría, J. Suñé, X. Aymerich, - (Editor)
Research output: Book/Report › Proceeding › Research