Proc. of the IEEE International Reliability Physics Symposium (IRPS). "Switching Behavior of the Soft Breakdown Conduction Characteristic in Ultrathin (<5nm) Oxide MOS Capacitors".: IEEE International Reliability Physics Symposium (IRPS).

E. MIranda; R. Rodríguez; M. Nafría; J. Suñé; X. Aymerich; null -

Proc. of the IEEE International Reliability Physics Symposium (IRPS). "Switching Behavior of the Soft Breakdown Conduction Characteristic in Ultrathin (<5nm) Oxide MOS Capacitors". IEEE International Reliability Physics Symposium (IRPS).

E. MIranda, R. Rodríguez, M. Nafría, J. Suñé, X. Aymerich, - (Editor)

Research output: Book/Report › Proceeding › Research

Original language	Undefined/Unknown
Place of Publication	Reno (US)
Number of pages	5
Publication status	Published - Jun 1998

Cite this

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title = "Proc. of the IEEE International Reliability Physics Symposium (IRPS). {"}Switching Behavior of the Soft Breakdown Conduction Characteristic in Ultrathin (<5nm) Oxide MOS Capacitors{"}.: IEEE International Reliability Physics Symposium (IRPS).",

author = "E. MIranda and R. Rodr{\'i}guez and M. Nafr{\'i}a and J. Su{\~n}{\'e} and X. Aymerich",

editor = "-",

year = "1998",

month = jun,

language = "Indefinido/desconocido",

}

Proc. of the IEEE International Reliability Physics Symposium (IRPS). "Switching Behavior of the Soft Breakdown Conduction Characteristic in Ultrathin (<5nm) Oxide MOS Capacitors". IEEE International Reliability Physics Symposium (IRPS). / MIranda, E.; Rodríguez, R.; Nafría, M.; Suñé, J.; Aymerich, X.; - (Editor).

Reno (US), 1998. 5 p.

Research output: Book/Report › Proceeding › Research

TY - BOOK

T1 - Proc. of the IEEE International Reliability Physics Symposium (IRPS). "Switching Behavior of the Soft Breakdown Conduction Characteristic in Ultrathin (<5nm) Oxide MOS Capacitors".

T2 - IEEE International Reliability Physics Symposium (IRPS).

AU - MIranda, E.

AU - Rodríguez, R.

AU - Nafría, M.

AU - Suñé, J.

AU - Aymerich, X.

A2 - -, null

PY - 1998/6

Y1 - 1998/6

M3 - Libro de Actas

BT - Proc. of the IEEE International Reliability Physics Symposium (IRPS). "Switching Behavior of the Soft Breakdown Conduction Characteristic in Ultrathin (<5nm) Oxide MOS Capacitors".

CY - Reno (US)

ER -