Preparation and characterization of oriented thin films of a sulfur-nitrogen radical

J. Caro, J. Fraxedas, J. Santiso, A. Figueras, J. M. Rawson, J. N.B. Smith, G. Antorrena, F. Palacio

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    Abstract

    Highly oriented thin films of the organic radical p-NC.C6F4.CNSSN have been prepared by thermal evaporation in high vacuum on glass and on highly oriented pyrolytic graphite (HOPG) substrates. The films are polycrystalline and crystallize in one of the known polymorphs, in the triclinic α-phase. The films exhibit a high degree of orientation with their (112) planes parallel to the surface of the substrates. No inplane texture is observed. © 1999 Elsevier Science S.A. All rights reserved.
    Original languageEnglish
    Pages (from-to)102-106
    JournalThin Solid Films
    Volume352
    Issue number1-2
    DOIs
    Publication statusPublished - 8 Sep 1999

    Keywords

    • Polycrystalline thin films
    • Surface structure, morphology, roughness and topography
    • X-ray photoelectron spectroscopy

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    Caro, J., Fraxedas, J., Santiso, J., Figueras, A., Rawson, J. M., Smith, J. N. B., Antorrena, G., & Palacio, F. (1999). Preparation and characterization of oriented thin films of a sulfur-nitrogen radical. Thin Solid Films, 352(1-2), 102-106. https://doi.org/10.1016/S0040-6090(99)00364-8