Pre-Breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM.

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Original language	English
Pages (from-to)	1203-1209
Journal	Microelectronics and Reliability
Volume	43
Issue number	8
DOIs	https://doi.org/10.1016/S0026-2714(03)00173-2
Publication status	Published - 1 Jan 2003

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@article{9dff8b1cd3b941a3804e85e8d8e67b6d,

title = "Pre-Breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM.",

author = "M. Porti and S. Meli and {Nafria Maqueda}, Montserrat and {Aymerich Humet}, {Francisco Javier}",

year = "2003",

month = jan,

day = "1",

doi = "10.1016/S0026-2714(03)00173-2",

language = "English",

volume = "43",

pages = "1203--1209",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Limited",

number = "8",

}

TY - JOUR

T1 - Pre-Breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM.

AU - Porti, M.

AU - Meli, S.

AU - Nafria Maqueda, Montserrat

AU - Aymerich Humet, Francisco Javier

PY - 2003/1/1

Y1 - 2003/1/1

U2 - 10.1016/S0026-2714(03)00173-2

DO - 10.1016/S0026-2714(03)00173-2

M3 - Article

VL - 43

SP - 1203

EP - 1209

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

IS - 8

ER -