Original language | English |
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Pages (from-to) | 1203-1209 |
Journal | Microelectronics and Reliability |
Volume | 43 |
Issue number | 8 |
DOIs | |
Publication status | Published - 1 Jan 2003 |
Pre-Breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM.
Research output: Contribution to journal › Article › Research
10
Citations
(Scopus)