Pre-Breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM.

    Research output: Contribution to journalArticleResearch

    10 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)1203-1209
    JournalMicroelectronics and Reliability
    Volume43
    Issue number8
    DOIs
    Publication statusPublished - 1 Jan 2003

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