Pre- and post-breakdown conduction of thin SiO2 gate oxides of MOS devices: a Conductive Atomic Force Microscope analysis

M. Porti, M. Nafría, X. Aymerich, Eugene V. Editors: Dirote (Editor)

Research output: Chapter in BookChapterResearch

Original languageEnglish
Title of host publicationFocus on Nanotechnology Research
Place of PublicationNova York (US)
Pages75-94
Number of pages19
Edition1
Publication statusPublished - 1 Jan 2004

Cite this