Pre- and post-breakdown conduction of thin SiO2 gate oxides of MOS devices: a Conductive Atomic Force Microscope analysis

M. Porti, M. Nafría, X. Aymerich, Eugene V. Editors: Dirote (Editor)

Research output: Chapter in Book › Chapter › Research

Original language	English
Title of host publication	Focus on Nanotechnology Research
Place of Publication	Nova York (US)
Pages	75-94
Number of pages	19
Edition	1
Publication status	Published - 1 Jan 2004

Cite this

@inbook{e28c841b35ef477e9f5a7058c1c8d658,

title = "Pre- and post-breakdown conduction of thin SiO2 gate oxides of MOS devices: a Conductive Atomic Force Microscope analysis",

author = "M. Porti and M. Nafr{\'i}a and X. Aymerich and {Editors: Dirote}, {Eugene V.}",

year = "2004",

month = jan,

day = "1",

language = "English",

isbn = "978-1-59033-937-4",

pages = "75--94",

booktitle = "Focus on Nanotechnology Research",

edition = "1",

}