Original language | English |
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Title of host publication | Focus on Nanotechnology Research |
Place of Publication | Nova York (US) |
Pages | 75-94 |
Number of pages | 19 |
Edition | 1 |
Publication status | Published - 1 Jan 2004 |
Pre- and post-breakdown conduction of thin SiO2 gate oxides of MOS devices: a Conductive Atomic Force Microscope analysis
M. Porti, M. Nafría, X. Aymerich, Eugene V. Editors: Dirote (Editor)
Research output: Chapter in Book › Chapter › Research