Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale

Research output: Contribution to journalArticleResearch

3 Citations (Scopus)
Original languageEnglish
Pages (from-to)1390-1393
JournalMicroelectronics and Reliability
Volume45
DOIs
Publication statusPublished - 1 Jan 2005

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