Original language | English |
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Pages (from-to) | 1390-1393 |
Journal | Microelectronics and Reliability |
Volume | 45 |
DOIs | |
Publication status | Published - 1 Jan 2005 |
Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale
L. Aguilera, M. Porti, M. Nafría, X. Aymerich
Research output: Contribution to journal › Article › Research
3
Citations
(Scopus)