Postbreakdown Conduction in Ultrathin La2 O3 Gate Dielectrics

E. Miranda, H. Iwai

Research output: Contribution to journalArticleResearch

Original languageEnglish
Pages (from-to)333-339
JournalIEEE Transactions on Device and Materials Reliability
Volume7
Issue number2
DOIs
Publication statusPublished - 1 Jan 2007

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