Post-breakdown current in MOS structures: extraction of parameters using the Integral difference function method

E. Miranda, A. Ortiz-Conde, F. García-Sánchez, E. Farkas-Sosa

Research output: Contribution to journalArticleResearch

1 Citation (Scopus)
Original languageEnglish
Pages (from-to)190-196
JournalIEEE Transactions on Device and Materials Reliability
Issue number2
Publication statusPublished - 1 Jan 2006

Cite this