Post-breakdown conduction in ultra-thin HfO<inf>2</inf> films in MOS transistors

E. Miranda, K. L. Pey, R. Ranjan, C. H. Tung

Research output: Contribution to journalArticleResearchpeer-review

Abstract

A compact model for the post-breakdown current in Si/HfO 2/TaN/TiN structures suitable for both gate voltage polarities is presented. Positive gate injection is considered to be dominated by the charge generation mechanism within the substrate depletion layer, whereas negative gate injection is simulated using a diode-like model with series resistance correction. The implicit equation for the current-voltage characteristic resulting for this latter mechanism is solved using the Lambert W function. © The Institution of Engineering and Technology 2007.
Original languageEnglish
Pages (from-to)1050-1051
JournalElectronics Letters
Volume43
DOIs
Publication statusPublished - 19 Sep 2007

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