Positive photoresist stripping by plasma barrel

E. Cabruja, C. Cané, M. Lozano, C. Domínguez, F. Serra-Mestres, E. Lora-Tamayo

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1 Citation (Scopus)

Abstract

The etch rate of a positive photoresist in a mixture of oxygen and tetrafluoromethane depends on many parameters such as the total pressure of the reaction chamber, the composition of the initial mixture, the total flow of the gases, the applied power to the discharge and the number of wafers processed at a time (known as 'loading effect'). The stripping reaction involves two mechanisms: a gas reaction and a surface reaction. One of these mechanisms dominates the reaction depending on the values of the system parameters. In this paper we analyze the influence of each of our system parameters on the etch rate in order to obtain a high etch rate taking into account the selectivity to other layers under the resist film. © 1989.
Original languageEnglish
Pages (from-to)757-759
JournalVacuum
Volume39
DOIs
Publication statusPublished - 1 Jan 1989

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