Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics

Mario Lanza; Vanessa Iglesias; Marc Porti; Montse Nafria; Xavier Aymerich

doi:https://doi.org/10.1186/1556-276X-6-108

Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics

Mario Lanza, Vanessa Iglesias, Marc Porti, Montse Nafria, Xavier Aymerich

Research output: Contribution to journal › Article › Research › peer-review

23 Citations (Scopus)

Abstract

In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al2O3-based gate stack, after a thermal annealing process, affects the variability of its electrical properties. The impact of an electrical stress on the electrical conduction and the charge trapping of amorphous and polycrystalline Al2O3 layers have been also analyzed. © 2011 Lanza et al.

Original language	English
Journal	Nanoscale Research Letters
Volume	6
DOIs	https://doi.org/10.1186/1556-276X-6-108
Publication status	Published - 1 Jan 2011

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@article{e1732eedfdf44861a09c4f1fe63bbff7,

title = "Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics",

abstract = "In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al2O3-based gate stack, after a thermal annealing process, affects the variability of its electrical properties. The impact of an electrical stress on the electrical conduction and the charge trapping of amorphous and polycrystalline Al2O3 layers have been also analyzed. {\textcopyright} 2011 Lanza et al.",

author = "Mario Lanza and Vanessa Iglesias and Marc Porti and Montse Nafria and Xavier Aymerich",

year = "2011",

month = jan,

day = "1",

doi = "https://doi.org/10.1186/1556-276X-6-108",

language = "English",

volume = "6",

}

TY - JOUR

T1 - Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics

AU - Lanza, Mario

AU - Iglesias, Vanessa

AU - Porti, Marc

AU - Nafria, Montse

AU - Aymerich, Xavier

PY - 2011/1/1

Y1 - 2011/1/1

N2 - In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al2O3-based gate stack, after a thermal annealing process, affects the variability of its electrical properties. The impact of an electrical stress on the electrical conduction and the charge trapping of amorphous and polycrystalline Al2O3 layers have been also analyzed. © 2011 Lanza et al.

AB - In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al2O3-based gate stack, after a thermal annealing process, affects the variability of its electrical properties. The impact of an electrical stress on the electrical conduction and the charge trapping of amorphous and polycrystalline Al2O3 layers have been also analyzed. © 2011 Lanza et al.

U2 - https://doi.org/10.1186/1556-276X-6-108

DO - https://doi.org/10.1186/1556-276X-6-108

M3 - Article

VL - 6

ER -