Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics

Mario Lanza, Vanessa Iglesias, Marc Porti, Montse Nafria, Xavier Aymerich

Research output: Contribution to journalArticleResearchpeer-review

23 Citations (Scopus)

Abstract

In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al2O3-based gate stack, after a thermal annealing process, affects the variability of its electrical properties. The impact of an electrical stress on the electrical conduction and the charge trapping of amorphous and polycrystalline Al2O3 layers have been also analyzed. © 2011 Lanza et al.
Original languageEnglish
JournalNanoscale Research Letters
Volume6
DOIs
Publication statusPublished - 1 Jan 2011

Fingerprint Dive into the research topics of 'Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics'. Together they form a unique fingerprint.

Cite this