Physics-based percolation model for the breakdown of ultra-thin (down to 1 nm) gate oxides for advanced CMOS

J. Suñé, E. Wu, S. Tous

    Research output: Contribution to journalArticleResearch

    Original languageEnglish
    Pages (from-to)177-183
    JournalEos : transactions
    Volume8
    Publication statusPublished - 1 Jan 2007

    Cite this