Physics-based percolation model for the breakdown of ultra-thin (down to 1 nm) gate oxides for advanced CMOS

Research output: Contribution to journalArticleResearch

1 Citation (Scopus)
Original languageEnglish
Pages (from-to)177-183
JournalECS Transactions
Volume8
Issue number1
Publication statusPublished - 1 Jan 2007

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