Physics-based percolation model for the breakdown of ultra-thin (down to 1 nm) gate oxides for advanced CMOS

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@article{24eca8c8b1d24532b2d05322ffb3a203,

title = "Physics-based percolation model for the breakdown of ultra-thin (down to 1 nm) gate oxides for advanced CMOS",

author = "{Su{\~n}e Tarruella}, {Jorge Francisco} and E. Wu and S. Tous",

year = "2007",

month = jan,

day = "1",

language = "English",

volume = "8",

pages = "177--183",

journal = "ECS Transactions",

issn = "1938-5862",

publisher = "Electrochemical Society, Inc.",

number = "1",

}