Original language | English |
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Pages (from-to) | 177-183 |
Journal | ECS Transactions |
Volume | 8 |
Issue number | 1 |
Publication status | Published - 1 Jan 2007 |
Physics-based percolation model for the breakdown of ultra-thin (down to 1 nm) gate oxides for advanced CMOS
Jorge Francisco Suñe Tarruella, E. Wu, S. Tous
Research output: Contribution to journal › Article › Research
1
Citation
(Scopus)