Physical model for the voltage and temperature dependence of the soft breakdown current in ultrathin gate oxides

Enrique Alberto Miranda Castellano, A. Avellán, D. Schroeder, W. Krautschneider

Research output: Contribution to journal › Article › Research

Original languageEnglish
Pages (from-to)---
JournalJournal of Applied Physics
Volume97
Publication statusPublished - 1 Jan 2005

Cite this

Miranda Castellano, E. A., Avellán, A., Schroeder, D., & Krautschneider, W. (2005). Physical model for the voltage and temperature dependence of the soft breakdown current in ultrathin gate oxides. Journal of Applied Physics, 97, ---.