Original language | English |
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Pages (from-to) | --- |
Journal | Journal of Applied Physics |
Volume | 97 |
Publication status | Published - 1 Jan 2005 |
Physical model for the voltage and temperature dependence of the soft breakdown current in ultrathin gate oxides
Enrique Alberto Miranda Castellano, A. Avellán, D. Schroeder, W. Krautschneider
Research output: Contribution to journal › Article › Research