Photoluminescence of overgrown GaAs-GaAlAs quantum dots

H. E.G. Arnot, M. Watt, C. M. Sotomayor-Torres, R. Glew, R. Cusco, J. Bates, S. P. Beaumont

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    43 Citations (Scopus)


    Buried GaAs-GaAlAs quantum dots have been grown by MOCVD for the first time. Free-standing quantum dots were formed in GaAs-GaAlAs single quantum well material by a combination of electron beam lithography and dry etching, then the dots were buried by regrowing GaAlAs. Low temperature (60K) photoluminescence spectra shows an emission which is increased in intensity and shifted to higher energies from the dots after they are buried. The efficiency of the emission scales approximately with the volume of material remaining after patterning. © 1989.
    Original languageEnglish
    Pages (from-to)459-463
    JournalSuperlattices and Microstructures
    Issue number3
    Publication statusPublished - 1 Jan 1989


    • GaAs/AlGaAs Quantum Dots
    • MOCVD Overgrowth
    • Photoluminescence


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