Photoluminescence of overgrown GaAs-GaAlAs quantum dots

H. E.G. Arnot; M. Watt; C. M. Sotomayor-Torres; R. Glew; R. Cusco; J. Bates; S. P. Beaumont

doi:10.1016/0749-6036(89)90333-9

Photoluminescence of overgrown GaAs-GaAlAs quantum dots

H. E.G. Arnot, M. Watt, C. M. Sotomayor-Torres, R. Glew, R. Cusco, J. Bates, S. P. Beaumont

Research output: Contribution to journal › Article › Research › peer-review

41 Citations (Scopus)

Abstract

Buried GaAs-GaAlAs quantum dots have been grown by MOCVD for the first time. Free-standing quantum dots were formed in GaAs-GaAlAs single quantum well material by a combination of electron beam lithography and dry etching, then the dots were buried by regrowing GaAlAs. Low temperature (60K) photoluminescence spectra shows an emission which is increased in intensity and shifted to higher energies from the dots after they are buried. The efficiency of the emission scales approximately with the volume of material remaining after patterning. © 1989.

Original language	English
Pages (from-to)	459-463
Journal	Superlattices and Microstructures
Volume	5
Issue number	3
DOIs	https://doi.org/10.1016/0749-6036(89)90333-9
Publication status	Published - 1 Jan 1989

Keywords

GaAs/AlGaAs Quantum Dots
MOCVD Overgrowth
Photoluminescence

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Arnot, H. E. G., Watt, M., Sotomayor-Torres, C. M., Glew, R., Cusco, R., Bates, J., & Beaumont, S. P. (1989). Photoluminescence of overgrown GaAs-GaAlAs quantum dots. Superlattices and Microstructures, 5(3), 459-463. https://doi.org/10.1016/0749-6036(89)90333-9

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AU - Arnot, H. E.G.

AU - Watt, M.

AU - Sotomayor-Torres, C. M.

AU - Glew, R.

AU - Cusco, R.

AU - Bates, J.

AU - Beaumont, S. P.

PY - 1989/1/1

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N2 - Buried GaAs-GaAlAs quantum dots have been grown by MOCVD for the first time. Free-standing quantum dots were formed in GaAs-GaAlAs single quantum well material by a combination of electron beam lithography and dry etching, then the dots were buried by regrowing GaAlAs. Low temperature (60K) photoluminescence spectra shows an emission which is increased in intensity and shifted to higher energies from the dots after they are buried. The efficiency of the emission scales approximately with the volume of material remaining after patterning. © 1989.

AB - Buried GaAs-GaAlAs quantum dots have been grown by MOCVD for the first time. Free-standing quantum dots were formed in GaAs-GaAlAs single quantum well material by a combination of electron beam lithography and dry etching, then the dots were buried by regrowing GaAlAs. Low temperature (60K) photoluminescence spectra shows an emission which is increased in intensity and shifted to higher energies from the dots after they are buried. The efficiency of the emission scales approximately with the volume of material remaining after patterning. © 1989.

KW - GaAs/AlGaAs Quantum Dots

KW - MOCVD Overgrowth

KW - Photoluminescence

U2 - 10.1016/0749-6036(89)90333-9

DO - 10.1016/0749-6036(89)90333-9

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