Photoluminescence of overgrown GaAs-GaAlAs quantum dots

H. E.G. Arnot, M. Watt, C. M. Sotomayor-Torres, R. Glew, R. Cusco, J. Bates, S. P. Beaumont

    Research output: Contribution to journalArticleResearchpeer-review

    41 Citations (Scopus)

    Abstract

    Buried GaAs-GaAlAs quantum dots have been grown by MOCVD for the first time. Free-standing quantum dots were formed in GaAs-GaAlAs single quantum well material by a combination of electron beam lithography and dry etching, then the dots were buried by regrowing GaAlAs. Low temperature (60K) photoluminescence spectra shows an emission which is increased in intensity and shifted to higher energies from the dots after they are buried. The efficiency of the emission scales approximately with the volume of material remaining after patterning. © 1989.
    Original languageEnglish
    Pages (from-to)459-463
    JournalSuperlattices and Microstructures
    Volume5
    Issue number3
    DOIs
    Publication statusPublished - 1 Jan 1989

    Keywords

    • GaAs/AlGaAs Quantum Dots
    • MOCVD Overgrowth
    • Photoluminescence

    Fingerprint Dive into the research topics of 'Photoluminescence of overgrown GaAs-GaAlAs quantum dots'. Together they form a unique fingerprint.

  • Cite this

    Arnot, H. E. G., Watt, M., Sotomayor-Torres, C. M., Glew, R., Cusco, R., Bates, J., & Beaumont, S. P. (1989). Photoluminescence of overgrown GaAs-GaAlAs quantum dots. Superlattices and Microstructures, 5(3), 459-463. https://doi.org/10.1016/0749-6036(89)90333-9