The preparation of a new ion-selective field-effect transistor (ISFET) based on a photocurable membrane sensitive to anionic surfactants is described. The membrane is formed by an urethane - acrylate matrix with 2-cyanophenyl octyl ether as the plasticiser. When compared to conventional ion-selective electrodes, the prepared ISFETs do not show significant differences in sensitivity and reproducibility (P = 0.05). When calibrating with dodecylbenzenesulfonate (DBS-) the prepared ISFETs show a nernstian behaviour, with a slope of 57.5 mV per decade. The linear working range is 1.0 × 10-3 to 3.0 × 10-6 M DBS- and the detection limit is 1.2 × 10-6 M. The response times were below 0.7 min in all cases (95% of the step change). As the application, photodegradation processes using titanium dioxide dispersions, were monitored for two common anionic surfactants; DBS-, being aromatic, and the more alkylic dodecylsulfate, DS-. The determination of surfactant concentration was performed following a standard addition methodology, using ISFETs as the sensors, and without any previous separation stages. The degradation kinetics in both cases are first-order processes, with half-life times (t0.5) of 31.5 min for DBS- and 52.0 min for DS-. © 2001 Elsevier Science B.V.
- Anionic surfactant
- Ion-selective field-effect transistor
- Photocurable membrane