pH‐ISFET with NMOS technology

S. Alegret; J. Bartrolí; C. Jiménez; M. del Valle; C. Domínguez; E. Cabruja; A. Merlos

doi:10.1002/elan.1140030418

pH‐ISFET with NMOS technology

S. Alegret, J. Bartrolí, C. Jiménez, M. del Valle, C. Domínguez, E. Cabruja, A. Merlos

Department of Chemistry

Research output: Contribution to journal › Article › Research › peer-review

25 Citations (Scopus)

Abstract

The construction of a pH‐ISFET (ion‐selective field effect transistor) fabricated with standard negative‐channel MOS technology, compatible with complementary MOS technology, and using silicon nitride as a pH‐sensitive material, is described. Its main analytical characteristics are discussed. The resulting calibration plot is linear over the pH range from 2 to 11; with a slope of 54 mV per pH unit. Copyright © 1991 VCH Publishers, Inc.

Original language	English
Pages (from-to)	355-360
Journal	Electroanalysis
Volume	3
Issue number	4-5
DOIs	https://doi.org/10.1002/elan.1140030418
Publication status	Published - 1 Jan 1991

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title = "pH‐ISFET with NMOS technology",

abstract = "The construction of a pH‐ISFET (ion‐selective field effect transistor) fabricated with standard negative‐channel MOS technology, compatible with complementary MOS technology, and using silicon nitride as a pH‐sensitive material, is described. Its main analytical characteristics are discussed. The resulting calibration plot is linear over the pH range from 2 to 11; with a slope of 54 mV per pH unit. Copyright {\textcopyright} 1991 VCH Publishers, Inc.",

author = "S. Alegret and J. Bartrol{\'i} and C. Jim{\'e}nez and {del Valle}, M. and C. Dom{\'i}nguez and E. Cabruja and A. Merlos",

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AU - Alegret, S.

AU - Bartrolí, J.

AU - Jiménez, C.

AU - del Valle, M.

AU - Domínguez, C.

AU - Cabruja, E.

AU - Merlos, A.

PY - 1991/1/1

Y1 - 1991/1/1

N2 - The construction of a pH‐ISFET (ion‐selective field effect transistor) fabricated with standard negative‐channel MOS technology, compatible with complementary MOS technology, and using silicon nitride as a pH‐sensitive material, is described. Its main analytical characteristics are discussed. The resulting calibration plot is linear over the pH range from 2 to 11; with a slope of 54 mV per pH unit. Copyright © 1991 VCH Publishers, Inc.

AB - The construction of a pH‐ISFET (ion‐selective field effect transistor) fabricated with standard negative‐channel MOS technology, compatible with complementary MOS technology, and using silicon nitride as a pH‐sensitive material, is described. Its main analytical characteristics are discussed. The resulting calibration plot is linear over the pH range from 2 to 11; with a slope of 54 mV per pH unit. Copyright © 1991 VCH Publishers, Inc.

U2 - 10.1002/elan.1140030418

DO - 10.1002/elan.1140030418

M3 - Article

VL - 3

SP - 355

EP - 360

JO - Electroanalysis

JF - Electroanalysis

SN - 1040-0397

IS - 4-5

ER -

pH‐ISFET with NMOS technology

Abstract

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