Abstract
The construction of a pH‐ISFET (ion‐selective field effect transistor) fabricated with standard negative‐channel MOS technology, compatible with complementary MOS technology, and using silicon nitride as a pH‐sensitive material, is described. Its main analytical characteristics are discussed. The resulting calibration plot is linear over the pH range from 2 to 11; with a slope of 54 mV per pH unit. Copyright © 1991 VCH Publishers, Inc.
Original language | English |
---|---|
Pages (from-to) | 355-360 |
Journal | Electroanalysis |
Volume | 3 |
Issue number | 4-5 |
DOIs | |
Publication status | Published - 1 Jan 1991 |