pH‐ISFET with NMOS technology

S. Alegret, J. Bartrolí, C. Jiménez, M. del Valle, C. Domínguez, E. Cabruja, A. Merlos

Research output: Contribution to journalArticleResearchpeer-review

24 Citations (Scopus)

Abstract

The construction of a pH‐ISFET (ion‐selective field effect transistor) fabricated with standard negative‐channel MOS technology, compatible with complementary MOS technology, and using silicon nitride as a pH‐sensitive material, is described. Its main analytical characteristics are discussed. The resulting calibration plot is linear over the pH range from 2 to 11; with a slope of 54 mV per pH unit. Copyright © 1991 VCH Publishers, Inc.
Original languageEnglish
Pages (from-to)355-360
JournalElectroanalysis
Volume3
Issue number4-5
DOIs
Publication statusPublished - 1 Jan 1991

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