Abstract
© 2017 IEEE. Power consumption and I on /I off ratio of an ultra-thin body and buried oxide fully depleted silicon on insulator CMOS inverter circuit has been calculated at near-threshold voltage operation from TCAD simulations. TCAD outputs (current, voltage, and capacitance) were used as parameters to solve the inverter circuit. Besides, a bias operation point (V OP ) has been proposed, which provides a good trade-off between the I on /I off ratio and the energy consumption. Variations of this operation point, due to the presence of interface traps, have been also analyzed.
Original language | English |
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Pages (from-to) | 55-62 |
Journal | IEEE Journal of the Electron Devices Society |
Volume | 6 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1 Jan 2018 |
Keywords
- CMOS inverter
- IoT
- Near-threshold voltage
- Power consumption
- TCAD
- UTBB FDSOI