Performance and power consumption trade-off in UTBB FDSOI inverters operated at NTV for IoT applications

Carlos Couso; Javier Martin-Martinez; Marc Porti; Montserrat Nafría

doi:10.1109/JEDS.2017.2768658

Performance and power consumption trade-off in UTBB FDSOI inverters operated at NTV for IoT applications

Carlos Couso, Javier Martin-Martinez, Marc Porti, Montserrat Nafría

Research output: Contribution to journal › Article › Research › peer-review

4 Citations (Scopus)

Abstract

© 2017 IEEE. Power consumption and I on /I off ratio of an ultra-thin body and buried oxide fully depleted silicon on insulator CMOS inverter circuit has been calculated at near-threshold voltage operation from TCAD simulations. TCAD outputs (current, voltage, and capacitance) were used as parameters to solve the inverter circuit. Besides, a bias operation point (V OP ) has been proposed, which provides a good trade-off between the I on /I off ratio and the energy consumption. Variations of this operation point, due to the presence of interface traps, have been also analyzed.

Original language	English
Pages (from-to)	55-62
Journal	IEEE Journal of the Electron Devices Society
Volume	6
Issue number	1
DOIs	https://doi.org/10.1109/JEDS.2017.2768658
Publication status	Published - 1 Jan 2018

Keywords

CMOS inverter
IoT
Near-threshold voltage
Power consumption
TCAD
UTBB FDSOI

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title = "Performance and power consumption trade-off in UTBB FDSOI inverters operated at NTV for IoT applications",

abstract = "{\textcopyright} 2017 IEEE. Power consumption and I on /I off ratio of an ultra-thin body and buried oxide fully depleted silicon on insulator CMOS inverter circuit has been calculated at near-threshold voltage operation from TCAD simulations. TCAD outputs (current, voltage, and capacitance) were used as parameters to solve the inverter circuit. Besides, a bias operation point (V OP ) has been proposed, which provides a good trade-off between the I on /I off ratio and the energy consumption. Variations of this operation point, due to the presence of interface traps, have been also analyzed.",

keywords = "CMOS inverter, IoT, Near-threshold voltage, Power consumption, TCAD, UTBB FDSOI",

author = "Carlos Couso and Javier Martin-Martinez and Marc Porti and Montserrat Nafr{\'i}a",

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AU - Couso, Carlos

AU - Martin-Martinez, Javier

AU - Porti, Marc

AU - Nafría, Montserrat

PY - 2018/1/1

Y1 - 2018/1/1

N2 - © 2017 IEEE. Power consumption and I on /I off ratio of an ultra-thin body and buried oxide fully depleted silicon on insulator CMOS inverter circuit has been calculated at near-threshold voltage operation from TCAD simulations. TCAD outputs (current, voltage, and capacitance) were used as parameters to solve the inverter circuit. Besides, a bias operation point (V OP ) has been proposed, which provides a good trade-off between the I on /I off ratio and the energy consumption. Variations of this operation point, due to the presence of interface traps, have been also analyzed.

AB - © 2017 IEEE. Power consumption and I on /I off ratio of an ultra-thin body and buried oxide fully depleted silicon on insulator CMOS inverter circuit has been calculated at near-threshold voltage operation from TCAD simulations. TCAD outputs (current, voltage, and capacitance) were used as parameters to solve the inverter circuit. Besides, a bias operation point (V OP ) has been proposed, which provides a good trade-off between the I on /I off ratio and the energy consumption. Variations of this operation point, due to the presence of interface traps, have been also analyzed.

KW - CMOS inverter

KW - IoT

KW - Near-threshold voltage

KW - Power consumption

KW - TCAD

KW - UTBB FDSOI

U2 - 10.1109/JEDS.2017.2768658

DO - 10.1109/JEDS.2017.2768658

M3 - Article

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EP - 62

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

SN - 2168-6734

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