Performance and power consumption trade-off in UTBB FDSOI inverters operated at NTV for IoT applications

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4 Citations (Scopus)

Abstract

© 2017 IEEE. Power consumption and I on /I off ratio of an ultra-thin body and buried oxide fully depleted silicon on insulator CMOS inverter circuit has been calculated at near-threshold voltage operation from TCAD simulations. TCAD outputs (current, voltage, and capacitance) were used as parameters to solve the inverter circuit. Besides, a bias operation point (V OP ) has been proposed, which provides a good trade-off between the I on /I off ratio and the energy consumption. Variations of this operation point, due to the presence of interface traps, have been also analyzed.
Original languageEnglish
Pages (from-to)55-62
JournalIEEE Journal of the Electron Devices Society
Volume6
Issue number1
DOIs
Publication statusPublished - 1 Jan 2018

Keywords

  • CMOS inverter
  • IoT
  • Near-threshold voltage
  • Power consumption
  • TCAD
  • UTBB FDSOI

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