PECVD of h-BN and c-BN films from boranedimethylamine as a single source precursor

Giovanni A. Battiston, Davide Berto, Annalisa Convertino, Dario Emiliani, Albert Figueras, Rosalba Gerbasi, Sesto Viticoli

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    9 Citations (Scopus)


    Boron nitride (BN) thin films have been successfully synthesised via low pressure plasma enhanced chemical vapour deposition (PECVD) by using boranedimethylamine, BH3NH(CH3)2, as a single source precursor in the temperature range 280-550 °C in a nitrogen-argon atmosphere. The plasma power was optimised with the aim of obtaining suitable cubic/hexagonal phase ratios. The annealing of the h-BN films at temperatures up to 1000 °C in a nitrogen atmosphere, at normal pressure, gave rise to a complete transformation into the cubic phase. FTIR measurements provided a suitable method for identifying the structure of BN films. UV-vis spectroscopy was carried out in order to investigate the optical behaviour of the films. © 2005 Elsevier Ltd. All rights reserved.
    Original languageEnglish
    Pages (from-to)4600-4604
    JournalElectrochimica Acta
    Issue number23 SPEC. ISS.
    Publication statusPublished - 25 Aug 2005


    • Boranedimethylamine
    • c-BN
    • h-BN
    • PECVD
    • Single source


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