PECVD of h-BN and c-BN films from boranedimethylamine as a single source precursor

Giovanni A. Battiston; Davide Berto; Annalisa Convertino; Dario Emiliani; Albert Figueras; Rosalba Gerbasi; Sesto Viticoli

doi:10.1016/j.electacta.2004.10.095

PECVD of h-BN and c-BN films from boranedimethylamine as a single source precursor

Giovanni A. Battiston, Davide Berto, Annalisa Convertino, Dario Emiliani, Albert Figueras, Rosalba Gerbasi, Sesto Viticoli

Research output: Contribution to journal › Article › Research › peer-review

9 Citations (Scopus)

Abstract

Boron nitride (BN) thin films have been successfully synthesised via low pressure plasma enhanced chemical vapour deposition (PECVD) by using boranedimethylamine, BH3NH(CH3)2, as a single source precursor in the temperature range 280-550 °C in a nitrogen-argon atmosphere. The plasma power was optimised with the aim of obtaining suitable cubic/hexagonal phase ratios. The annealing of the h-BN films at temperatures up to 1000 °C in a nitrogen atmosphere, at normal pressure, gave rise to a complete transformation into the cubic phase. FTIR measurements provided a suitable method for identifying the structure of BN films. UV-vis spectroscopy was carried out in order to investigate the optical behaviour of the films. © 2005 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	4600-4604
Journal	Electrochimica Acta
Volume	50
Issue number	23 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.electacta.2004.10.095
Publication status	Published - 25 Aug 2005

Keywords

Boranedimethylamine
c-BN
h-BN
PECVD
Single source

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10.1016/j.electacta.2004.10.095

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title = "PECVD of h-BN and c-BN films from boranedimethylamine as a single source precursor",

abstract = "Boron nitride (BN) thin films have been successfully synthesised via low pressure plasma enhanced chemical vapour deposition (PECVD) by using boranedimethylamine, BH3NH(CH3)2, as a single source precursor in the temperature range 280-550 °C in a nitrogen-argon atmosphere. The plasma power was optimised with the aim of obtaining suitable cubic/hexagonal phase ratios. The annealing of the h-BN films at temperatures up to 1000 °C in a nitrogen atmosphere, at normal pressure, gave rise to a complete transformation into the cubic phase. FTIR measurements provided a suitable method for identifying the structure of BN films. UV-vis spectroscopy was carried out in order to investigate the optical behaviour of the films. {\textcopyright} 2005 Elsevier Ltd. All rights reserved.",

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author = "Battiston, {Giovanni A.} and Davide Berto and Annalisa Convertino and Dario Emiliani and Albert Figueras and Rosalba Gerbasi and Sesto Viticoli",

year = "2005",

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language = "English",

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number = "23 SPEC. ISS.",

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TY - JOUR

T1 - PECVD of h-BN and c-BN films from boranedimethylamine as a single source precursor

AU - Battiston, Giovanni A.

AU - Berto, Davide

AU - Convertino, Annalisa

AU - Emiliani, Dario

AU - Figueras, Albert

AU - Gerbasi, Rosalba

AU - Viticoli, Sesto

PY - 2005/8/25

Y1 - 2005/8/25

N2 - Boron nitride (BN) thin films have been successfully synthesised via low pressure plasma enhanced chemical vapour deposition (PECVD) by using boranedimethylamine, BH3NH(CH3)2, as a single source precursor in the temperature range 280-550 °C in a nitrogen-argon atmosphere. The plasma power was optimised with the aim of obtaining suitable cubic/hexagonal phase ratios. The annealing of the h-BN films at temperatures up to 1000 °C in a nitrogen atmosphere, at normal pressure, gave rise to a complete transformation into the cubic phase. FTIR measurements provided a suitable method for identifying the structure of BN films. UV-vis spectroscopy was carried out in order to investigate the optical behaviour of the films. © 2005 Elsevier Ltd. All rights reserved.

AB - Boron nitride (BN) thin films have been successfully synthesised via low pressure plasma enhanced chemical vapour deposition (PECVD) by using boranedimethylamine, BH3NH(CH3)2, as a single source precursor in the temperature range 280-550 °C in a nitrogen-argon atmosphere. The plasma power was optimised with the aim of obtaining suitable cubic/hexagonal phase ratios. The annealing of the h-BN films at temperatures up to 1000 °C in a nitrogen atmosphere, at normal pressure, gave rise to a complete transformation into the cubic phase. FTIR measurements provided a suitable method for identifying the structure of BN films. UV-vis spectroscopy was carried out in order to investigate the optical behaviour of the films. © 2005 Elsevier Ltd. All rights reserved.

KW - Boranedimethylamine

KW - c-BN

KW - h-BN

KW - PECVD

KW - Single source

U2 - 10.1016/j.electacta.2004.10.095

DO - 10.1016/j.electacta.2004.10.095

M3 - Article

SN - 0013-4686

VL - 50

SP - 4600

EP - 4604

JO - Electrochimica Acta

JF - Electrochimica Acta

IS - 23 SPEC. ISS.

ER -

PECVD of h-BN and c-BN films from boranedimethylamine as a single source precursor

Abstract

Keywords

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