In this paper a self-oscillator based on a polysilicon free-free beam resonator monolithically integrated and packaged in a 0.35 μm complementary metal-oxide-semiconductor (CMOS) technology is presented. The oscillator is capable of providing a 350 mVPPsinusoidal signal at 25.6 MHz, with a bias polarization voltage of 7 V. The microelectromechanical systems (MEMS) resonator is packaged using only the back-end-of-line metal layers of the CMOS technology, providing a complete low-cost CMOS-MEMS processing for on-chip frequency references. © 2013 IOP Publishing Ltd.
|Journal||Journal of Micromechanics and Microengineering|
|Publication status||Published - 1 Nov 2013|