Oxide thickness determination in CrSiO<inf>2</inf>Si structures by dc current-voltage pairs

X. Aymerich-Humet; F. Campabadal; F. Serra-Mestres

doi:https://doi.org/10.1016/0042-207X(87)90321-6

Oxide thickness determination in CrSiO<inf>2</inf>Si structures by dc current-voltage pairs

X. Aymerich-Humet, F. Campabadal, F. Serra-Mestres

Department of Physics

Research output: Contribution to journal › Article › Research › peer-review

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Abstract

A recently proposed method for obtaining the oxide thickness based in current-voltage pairs in the Fowler-Nordheim regime is analysed in the CrSiO2Si(p) structures with oxide thickness in the range 50-60 Å. After measuring the capacitance-voltage, and current-voltage characteristics, the Fowler-Nordheim plot is obtained, yielding the CrSiO2 barrier height. Then, applying an iterative technique the oxide thickness is obtained for each I-V pair. The results show that in spite of the oscillatory structure exhibited in the Fowler-Nordheim regime the accuracy in the oxide thickness obtained in this way is much greater than in other electrical methods. © 1987.

Original language	English
Pages (from-to)	403-405
Journal	Vacuum
Volume	37
DOIs	https://doi.org/10.1016/0042-207X(87)90321-6
Publication status	Published - 1 Jan 1987

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@article{5440f67d8ff441f2b657a624bdba91da,

title = "Oxide thickness determination in CrSiO2Si structures by dc current-voltage pairs",

abstract = "A recently proposed method for obtaining the oxide thickness based in current-voltage pairs in the Fowler-Nordheim regime is analysed in the CrSiO2Si(p) structures with oxide thickness in the range 50-60 {\AA}. After measuring the capacitance-voltage, and current-voltage characteristics, the Fowler-Nordheim plot is obtained, yielding the CrSiO2 barrier height. Then, applying an iterative technique the oxide thickness is obtained for each I-V pair. The results show that in spite of the oscillatory structure exhibited in the Fowler-Nordheim regime the accuracy in the oxide thickness obtained in this way is much greater than in other electrical methods. {\textcopyright} 1987.",

author = "X. Aymerich-Humet and F. Campabadal and F. Serra-Mestres",

year = "1987",

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doi = "https://doi.org/10.1016/0042-207X(87)90321-6",

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T1 - Oxide thickness determination in CrSiO2Si structures by dc current-voltage pairs

AU - Aymerich-Humet, X.

AU - Campabadal, F.

AU - Serra-Mestres, F.

PY - 1987/1/1

Y1 - 1987/1/1

N2 - A recently proposed method for obtaining the oxide thickness based in current-voltage pairs in the Fowler-Nordheim regime is analysed in the CrSiO2Si(p) structures with oxide thickness in the range 50-60 Å. After measuring the capacitance-voltage, and current-voltage characteristics, the Fowler-Nordheim plot is obtained, yielding the CrSiO2 barrier height. Then, applying an iterative technique the oxide thickness is obtained for each I-V pair. The results show that in spite of the oscillatory structure exhibited in the Fowler-Nordheim regime the accuracy in the oxide thickness obtained in this way is much greater than in other electrical methods. © 1987.

AB - A recently proposed method for obtaining the oxide thickness based in current-voltage pairs in the Fowler-Nordheim regime is analysed in the CrSiO2Si(p) structures with oxide thickness in the range 50-60 Å. After measuring the capacitance-voltage, and current-voltage characteristics, the Fowler-Nordheim plot is obtained, yielding the CrSiO2 barrier height. Then, applying an iterative technique the oxide thickness is obtained for each I-V pair. The results show that in spite of the oscillatory structure exhibited in the Fowler-Nordheim regime the accuracy in the oxide thickness obtained in this way is much greater than in other electrical methods. © 1987.

U2 - https://doi.org/10.1016/0042-207X(87)90321-6

DO - https://doi.org/10.1016/0042-207X(87)90321-6

M3 - Article

SN - 0042-207X

VL - 37

SP - 403

EP - 405

JO - Vacuum

JF - Vacuum

ER -

Oxide thickness determination in CrSiO<inf>2</inf>Si structures by dc current-voltage pairs

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