Oxide degradation and breakdown in stressed MOS capacitors

Translated title of the contribution: Oxide degradation and breakdown in stressed MOS capacitors

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Translated title of the contribution	Oxide degradation and breakdown in stressed MOS capacitors
Original language	Multiple languages
Pages (from-to)	783-786
Journal	J. Phys. (Paris)
Issue number	49
Publication status	Published - 1 Jan 1988

Cite this

@article{e221de24b11e4223af496b19e8b55413,

title = "Oxide degradation and breakdown in stressed MOS capacitors",

author = "I. Placencia and J. Su{\~n}{\'e} and N. Barniol and E. Farr{\'e}s and X. Aymerich",

year = "1988",

month = jan,

day = "1",

language = "M{\'u}ltiples idiomas",

pages = "783--786",

journal = "Journal De Physique",

issn = "0302-0738",

number = "49",

}