| Translated title of the contribution | Oxide degradation and breakdown in stressed MOS capacitors |
|---|---|
| Original language | Multiple languages |
| Pages (from-to) | 783-786 |
| Journal | J. Phys. (Paris) |
| Issue number | 49 |
| Publication status | Published - 1 Jan 1988 |
Oxide degradation and breakdown in stressed MOS capacitors
I. Placencia, J. Suñé, N. Barniol, E. Farrés, X. Aymerich
Research output: Contribution to journal › Article › Research