Translated title of the contribution | Oxide degradation and breakdown in stressed MOS capacitors |
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Original language | Multiple languages |
Pages (from-to) | 783-786 |
Journal | J. Phys. (Paris) |
Issue number | 49 |
Publication status | Published - 1 Jan 1988 |
Oxide degradation and breakdown in stressed MOS capacitors
I. Placencia, J. Suñé, N. Barniol, E. Farrés, X. Aymerich
Research output: Contribution to journal › Article › Research