Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM

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    3 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)1501-1505
    JournalMicroelectronics and Reliability
    Volume43
    Issue number9-11
    DOIs
    Publication statusPublished - 1 Jan 2003

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