Oxide Breakdown Spot Spatial Patterns as Fingerprints for Optical Physical Unclonable Functions

Dielectric Breakdown (BD) of the gate oxide in a Metal-Insulator-Semiconductor (MIS) or Metal-Insulator-Metal (MIM) structure has been traditionally considered a major drawback since such event can seriously affect the electrical performance of the circuit containing the device. However, since BD is an inherently random process, when externally detectable by optical means, the phenomenon can be used to generate cryptographic keys for Physically Unclonable Functions (PUFs). This is the case discussed here. Images containing BD spot spatial distributions in MIM devices were binarized and their uniformity, uniqueness and reproducibility evaluated as fingerprints for security applications such as anti-counterfeiting purposes, secure identification and authentication of components. The obtained results are highly promising since it is demonstrated that the generated fingerprints meet all the mandatory requirements for PUFs, indicating that the proposed approach is potentially useful for this kind of applications.