Optimization of the epitaxial layer properties for low voltage capability VDMOS devices

J. Fernández, F. Berta, S. Hidalgo, J. Paredes, J. Rebollo, J. Millán, F. Serra-Mestres

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Abstract

The influence of the body doping level on the optimum epitaxial layer properties for low voltage capability VDMOS devices with minimum specific ON resistance is shown. The Poisson equation is analytically solved by approximating the Gaussian profile of the body region by a linear graded junction. The epitaxial properties obtained result in a reduction of the specific ON resistance around 20% for both interdigitated and cellular designs. © 1989.
Original languageEnglish
Pages (from-to)761-763
JournalVacuum
Volume39
Issue number7-8
DOIs
Publication statusPublished - 1 Jan 1989

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    Fernández, J., Berta, F., Hidalgo, S., Paredes, J., Rebollo, J., Millán, J., & Serra-Mestres, F. (1989). Optimization of the epitaxial layer properties for low voltage capability VDMOS devices. Vacuum, 39(7-8), 761-763. https://doi.org/10.1016/0042-207X(89)90032-8