The influence of the body doping level on the optimum epitaxial layer properties for low voltage capability VDMOS devices with minimum specific ON resistance is shown. The Poisson equation is analytically solved by approximating the Gaussian profile of the body region by a linear graded junction. The epitaxial properties obtained result in a reduction of the specific ON resistance around 20% for both interdigitated and cellular designs. © 1989.
Fernández, J., Berta, F., Hidalgo, S., Paredes, J., Rebollo, J., Millán, J., & Serra-Mestres, F. (1989). Optimization of the epitaxial layer properties for low voltage capability VDMOS devices. Vacuum, 39(7-8), 761-763. https://doi.org/10.1016/0042-207X(89)90032-8