An initial investigation of the influence of the sacrificial oxidation process on the improvement of the quality of deposited SiC films is reported. The process is developed in three different steps: polishing of SiC heterostructures, heating in an O2 atmosphere at 1150°C for 15 h, and finally, deoxidation of the overgrown layers. The two non-destructive techniques which have been used to characterise the 'ready for processing' samples are low temperature, photoluminescence and Raman scattering. Experimental results show that in processed samples the interfacial stress relaxes appreciably and the photoluminescence efficiency is considerably improved. © 1996 The Institute of Materials.
|Journal||Materials Science and Technology|
|Publication status||Published - 1 Jan 1996|