Optical investigation of quality improvement of 3C-SiC films after sacrificial oxidation process

G. Arnaud; F. Alsina; J. Pascual; C. Dezauzier; J. Camassel; N. Bécourt; L. Di Ciocco

Optical investigation of quality improvement of 3C-SiC films after sacrificial oxidation process

G. Arnaud, F. Alsina, J. Pascual, C. Dezauzier, J. Camassel, N. Bécourt, L. Di Ciocco

Department of Physics

Research output: Contribution to journal › Article › Research › peer-review

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Abstract

An initial investigation of the influence of the sacrificial oxidation process on the improvement of the quality of deposited SiC films is reported. The process is developed in three different steps: polishing of SiC heterostructures, heating in an O2 atmosphere at 1150°C for 15 h, and finally, deoxidation of the overgrown layers. The two non-destructive techniques which have been used to characterise the 'ready for processing' samples are low temperature, photoluminescence and Raman scattering. Experimental results show that in processed samples the interfacial stress relaxes appreciably and the photoluminescence efficiency is considerably improved. © 1996 The Institute of Materials.

Original language	English
Pages (from-to)	108-111
Journal	Materials Science and Technology
Volume	12
Issue number	1
Publication status	Published - 1 Jan 1996

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title = "Optical investigation of quality improvement of 3C-SiC films after sacrificial oxidation process",

abstract = "An initial investigation of the influence of the sacrificial oxidation process on the improvement of the quality of deposited SiC films is reported. The process is developed in three different steps: polishing of SiC heterostructures, heating in an O2 atmosphere at 1150°C for 15 h, and finally, deoxidation of the overgrown layers. The two non-destructive techniques which have been used to characterise the 'ready for processing' samples are low temperature, photoluminescence and Raman scattering. Experimental results show that in processed samples the interfacial stress relaxes appreciably and the photoluminescence efficiency is considerably improved. {\textcopyright} 1996 The Institute of Materials.",

author = "G. Arnaud and F. Alsina and J. Pascual and C. Dezauzier and J. Camassel and N. B{\'e}court and {Di Ciocco}, L.",

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T1 - Optical investigation of quality improvement of 3C-SiC films after sacrificial oxidation process

AU - Arnaud, G.

AU - Alsina, F.

AU - Pascual, J.

AU - Dezauzier, C.

AU - Camassel, J.

AU - Bécourt, N.

AU - Di Ciocco, L.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - An initial investigation of the influence of the sacrificial oxidation process on the improvement of the quality of deposited SiC films is reported. The process is developed in three different steps: polishing of SiC heterostructures, heating in an O2 atmosphere at 1150°C for 15 h, and finally, deoxidation of the overgrown layers. The two non-destructive techniques which have been used to characterise the 'ready for processing' samples are low temperature, photoluminescence and Raman scattering. Experimental results show that in processed samples the interfacial stress relaxes appreciably and the photoluminescence efficiency is considerably improved. © 1996 The Institute of Materials.

AB - An initial investigation of the influence of the sacrificial oxidation process on the improvement of the quality of deposited SiC films is reported. The process is developed in three different steps: polishing of SiC heterostructures, heating in an O2 atmosphere at 1150°C for 15 h, and finally, deoxidation of the overgrown layers. The two non-destructive techniques which have been used to characterise the 'ready for processing' samples are low temperature, photoluminescence and Raman scattering. Experimental results show that in processed samples the interfacial stress relaxes appreciably and the photoluminescence efficiency is considerably improved. © 1996 The Institute of Materials.

M3 - Article

VL - 12

SP - 108

EP - 111

IS - 1

ER -