Optical determination of growth variants in ordered GaInP

F. Alsina, M. Garriga, M. I. Alonso, S. Tortosa, J. Pascual, C. Geng, F. Scholz, R. W. Glew

Research output: Contribution to journalArticleResearchpeer-review

6 Citations (Scopus)

Abstract

Measurements on the dependence of the ellipsometric parameters as a function of azimuthal angle allow the determination of the dielectric tensor including its orientation with respect to the sample surface. This is done in ordered GaInP at the fixed energy of 3.3 eV where the anisotropy manifests at largest. In such material this method allows to discriminate between the presence of singly or doubly ordered variants and, in the former case, allows to establish which one of the two subvariants ([1̄11] or [11̄1]) is grown. © 1997 Elsevier Science Ltd. All rights reserved.
Original languageEnglish
Pages (from-to)757-760
JournalSolid State Communications
Volume101
DOIs
Publication statusPublished - 1 Jan 1997

Keywords

  • A. semiconductors
  • D. optical properties
  • D. order-disorder effects

Fingerprint Dive into the research topics of 'Optical determination of growth variants in ordered GaInP'. Together they form a unique fingerprint.

Cite this