On the SiSiO<inf>2</inf> interface roughness in VLSIMOS structures

J. Suñéa; I. Placencia; E. Farréas; N. Barniol; X. Aymerich

doi:10.1002/pssa.2211090214

On the SiSiO<inf>2</inf> interface roughness in VLSIMOS structures

J. Suñéa, I. Placencia, E. Farréas, N. Barniol, X. Aymerich

Department of Physics

Research output: Contribution to journal › Article › Research › peer-review

10 Citations (Scopus)

Abstract

The microroughness of the SiO2 interfaces in VLSIMOS devices is studied considering a statistical distribution of local oxide thicknesses at an appropriated superficial scale. The influence of this microroughness on the Fowler‐Nordheim (F‐N) conduction is analyzed in detail. The current in the F‐N regime is found to flow concentrated in small regions of the total area of the rough oxide layer. The F‐N plot is found to deviate from linearity in the low‐electric‐field region. Quantum oscillations in the F‐N plot of structures containing very thin and rough oxides are theoretically explained after having reinterpreted the SiOx interfacial transition layer in terms of the microroughness and assuming a chemically abrupt local interface. Copyright © 1988 WILEY‐VCH Verlag GmbH & Co. KGaA

Original language	English
Pages (from-to)	479-491
Journal	physica status solidi (a)
Volume	109
Issue number	2
DOIs	https://doi.org/10.1002/pssa.2211090214
Publication status	Published - 1 Jan 1988

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title = "On the SiSiO2 interface roughness in VLSIMOS structures",

abstract = "The microroughness of the SiO2 interfaces in VLSIMOS devices is studied considering a statistical distribution of local oxide thicknesses at an appropriated superficial scale. The influence of this microroughness on the Fowler‐Nordheim (F‐N) conduction is analyzed in detail. The current in the F‐N regime is found to flow concentrated in small regions of the total area of the rough oxide layer. The F‐N plot is found to deviate from linearity in the low‐electric‐field region. Quantum oscillations in the F‐N plot of structures containing very thin and rough oxides are theoretically explained after having reinterpreted the SiOx interfacial transition layer in terms of the microroughness and assuming a chemically abrupt local interface. Copyright {\textcopyright} 1988 WILEY‐VCH Verlag GmbH & Co. KGaA",

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T1 - On the SiSiO2 interface roughness in VLSIMOS structures

AU - Suñéa, J.

AU - Placencia, I.

AU - Farréas, E.

AU - Barniol, N.

AU - Aymerich, X.

PY - 1988/1/1

Y1 - 1988/1/1

N2 - The microroughness of the SiO2 interfaces in VLSIMOS devices is studied considering a statistical distribution of local oxide thicknesses at an appropriated superficial scale. The influence of this microroughness on the Fowler‐Nordheim (F‐N) conduction is analyzed in detail. The current in the F‐N regime is found to flow concentrated in small regions of the total area of the rough oxide layer. The F‐N plot is found to deviate from linearity in the low‐electric‐field region. Quantum oscillations in the F‐N plot of structures containing very thin and rough oxides are theoretically explained after having reinterpreted the SiOx interfacial transition layer in terms of the microroughness and assuming a chemically abrupt local interface. Copyright © 1988 WILEY‐VCH Verlag GmbH & Co. KGaA

AB - The microroughness of the SiO2 interfaces in VLSIMOS devices is studied considering a statistical distribution of local oxide thicknesses at an appropriated superficial scale. The influence of this microroughness on the Fowler‐Nordheim (F‐N) conduction is analyzed in detail. The current in the F‐N regime is found to flow concentrated in small regions of the total area of the rough oxide layer. The F‐N plot is found to deviate from linearity in the low‐electric‐field region. Quantum oscillations in the F‐N plot of structures containing very thin and rough oxides are theoretically explained after having reinterpreted the SiOx interfacial transition layer in terms of the microroughness and assuming a chemically abrupt local interface. Copyright © 1988 WILEY‐VCH Verlag GmbH & Co. KGaA

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DO - 10.1002/pssa.2211090214

M3 - Article

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EP - 491

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