| Translated title of the contribution | On the Si-SiO2 interface roughness in VLSI-MOS structures |
|---|---|
| Original language | Multiple languages |
| Pages (from-to) | 479-491 |
| Journal | Physica status solidi. A, Applied research |
| Volume | 0 |
| Issue number | 109 |
| Publication status | Published - 1 Jan 1988 |
On the Si-SiO2 interface roughness in VLSI-MOS structures
J. Suñé, I. Placencia, E. Farrés, N. Barniol, X. Aymerich
Research output: Contribution to journal › Article › Research
10
Citations
(Scopus)