On the Effects of Localized States and Tunnel Charge in Thin Insulating Films

F. Campabadal, X. Aymerich‐Humet

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    2 Citations (Scopus)


    Tunneling barrier modifications produced by the charge of localized states in thin SiO2 films and by the charge due to the electron tunnel penetration into the barrier are analysed by means of the Green's function formalism. The charge density distribution at each energy, the modification of the electric field at the insulator, and the barrier height are obtained at equilibrium and under biasing conditions. It is shown that there exists a thickness d0 such that for d > d0 the charge inside the insulator is due to the localized states whereas ford d < d0 the tunnel charge predominates. Moreover, in the latter case, it is shown that in SiO2 films the electric field enhancement can be so large as to make the external electric field needed for breakdown lower than expected, in accordance with the anomalous breakdown values experimentally observed in the literature. An analysis of the transient charge localization in the oxide is also performed. Copyright © 1985 WILEY‐VCH Verlag GmbH & Co. KGaA
    Original languageEnglish
    Pages (from-to)305-315
    Journalphysica status solidi (b)
    Publication statusPublished - 1 Jan 1985


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