On the dissipation of energy by hot electrons in SiO<inf>2</inf>

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The energetic behaviour of hot electrons in the SiO2of MOS capacitors subjected to constant-current stresses has been studied by means of a Monte Carlo simulation. The authors have observed that, for thick enough oxides, the average electron energy increases near the Si-SiO2interface up to its steady-state value. These theoretical results are in accordance with the experimental evidence that this interface is the most degraded region of the oxide during electrical injection stresses. From the energy distributions of hot electrons, the fraction of electrons with energy below a threshold value (2.2 eV) has been registered for different electric fields and oxide thicknesses. Since this fraction is proportional to the time-to-breakdown, the authors explain the experimental thickness dependence of the time-to-breakdown in the cases of high and low values of oxide current density. © 1990 IOP Publishing Ltd.
Original languageEnglish
Pages (from-to)1576-1581
JournalJournal Physics D: Applied Physics
Publication statusPublished - 14 Dec 1990


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