Numerical simulation of the insulated base MOS-controlled thyristor

D. Flores, P. Godignon, M. Vellvehí, J. Fernández, S. Hidalgo, J. Rebollo, J. Millán

Research output: Contribution to journalArticleResearchpeer-review

Abstract

This paper is aimed at the analysis of the insulated base MOS-controlled thyristor (IBMCT) using numerical simulations. This power device is composed of a vertical thyristor structure, two MOS gates (on-gate and off-gate) and a floating ohmic contact (FOC). Transient simulations confirm the turn-off capability, and show that holes are diverted from the p-base to the FOC during the turn-off process. The electrical characteristics have been compared with those of the shorted anode IBMCT. It is pointed out that this last structure is significantly faster than the IBMCT because the shorted anode provides a direct path for the extraction of the electron charge excess existing in the drift region during the turn-off process.
Original languageEnglish
Pages (from-to)177-180
JournalMicroelectronics
Volume27
Issue number2-3
DOIs
Publication statusPublished - 1 Jan 1996

Fingerprint

Dive into the research topics of 'Numerical simulation of the insulated base MOS-controlled thyristor'. Together they form a unique fingerprint.

Cite this