Numerical simulation of the insulated base MOS-controlled thyristor

D. Flores; P. Godignon; M. Vellvehí; J. Fernández; S. Hidalgo; J. Rebollo; J. Millán

doi:10.1016/0026-2692(95)00086-0

Numerical simulation of the insulated base MOS-controlled thyristor

D. Flores, P. Godignon, M. Vellvehí, J. Fernández, S. Hidalgo, J. Rebollo, J. Millán

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

Abstract

This paper is aimed at the analysis of the insulated base MOS-controlled thyristor (IBMCT) using numerical simulations. This power device is composed of a vertical thyristor structure, two MOS gates (on-gate and off-gate) and a floating ohmic contact (FOC). Transient simulations confirm the turn-off capability, and show that holes are diverted from the p-base to the FOC during the turn-off process. The electrical characteristics have been compared with those of the shorted anode IBMCT. It is pointed out that this last structure is significantly faster than the IBMCT because the shorted anode provides a direct path for the extraction of the electron charge excess existing in the drift region during the turn-off process.

Original language	English
Pages (from-to)	177-180
Journal	Microelectronics
Volume	27
Issue number	2-3
DOIs	https://doi.org/10.1016/0026-2692(95)00086-0
Publication status	Published - 1 Jan 1996

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title = "Numerical simulation of the insulated base MOS-controlled thyristor",

abstract = "This paper is aimed at the analysis of the insulated base MOS-controlled thyristor (IBMCT) using numerical simulations. This power device is composed of a vertical thyristor structure, two MOS gates (on-gate and off-gate) and a floating ohmic contact (FOC). Transient simulations confirm the turn-off capability, and show that holes are diverted from the p-base to the FOC during the turn-off process. The electrical characteristics have been compared with those of the shorted anode IBMCT. It is pointed out that this last structure is significantly faster than the IBMCT because the shorted anode provides a direct path for the extraction of the electron charge excess existing in the drift region during the turn-off process.",

author = "D. Flores and P. Godignon and M. Vellveh{\'i} and J. Fern{\'a}ndez and S. Hidalgo and J. Rebollo and J. Mill{\'a}n",

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AU - Flores, D.

AU - Godignon, P.

AU - Vellvehí, M.

AU - Fernández, J.

AU - Hidalgo, S.

AU - Rebollo, J.

AU - Millán, J.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - This paper is aimed at the analysis of the insulated base MOS-controlled thyristor (IBMCT) using numerical simulations. This power device is composed of a vertical thyristor structure, two MOS gates (on-gate and off-gate) and a floating ohmic contact (FOC). Transient simulations confirm the turn-off capability, and show that holes are diverted from the p-base to the FOC during the turn-off process. The electrical characteristics have been compared with those of the shorted anode IBMCT. It is pointed out that this last structure is significantly faster than the IBMCT because the shorted anode provides a direct path for the extraction of the electron charge excess existing in the drift region during the turn-off process.

AB - This paper is aimed at the analysis of the insulated base MOS-controlled thyristor (IBMCT) using numerical simulations. This power device is composed of a vertical thyristor structure, two MOS gates (on-gate and off-gate) and a floating ohmic contact (FOC). Transient simulations confirm the turn-off capability, and show that holes are diverted from the p-base to the FOC during the turn-off process. The electrical characteristics have been compared with those of the shorted anode IBMCT. It is pointed out that this last structure is significantly faster than the IBMCT because the shorted anode provides a direct path for the extraction of the electron charge excess existing in the drift region during the turn-off process.

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DO - 10.1016/0026-2692(95)00086-0

M3 - Article

SN - 0026-2692

VL - 27

SP - 177

EP - 180

JO - Microelectronics

JF - Microelectronics

IS - 2-3

ER -

Numerical simulation of the insulated base MOS-controlled thyristor

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