Nonlinear conductance quantization effects in CeO <inf>x</inf>/SiO <inf>2</inf>-based resistive switching devices

E. Miranda; S. Kano; C. Dou; K. Kakushima; J. Sué; H. Iwai

doi:10.1063/1.4733356

Nonlinear conductance quantization effects in CeO <inf>x</inf>/SiO <inf>2</inf>-based resistive switching devices

E. Miranda, S. Kano, C. Dou, K. Kakushima, J. Sué, H. Iwai

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

33 Citations (Scopus)

Abstract

The electron transport in W/CeO x/SiO 2/NiSi 2 resistive switching devices fabricated onto a p +-type Si substrate is investigated. It is shown that the structures exhibit bipolar switching with conductance values in the low resistance state (LRS) close to integer and half integer values of the quantum unit G 0 = 2e 2/h, e and h being the electron charge and Planck constant, respectively. This behavior is consistent with the so-called nonlinear conduction regime in quantum point-contacts. A simple model for the LRS current-voltage characteristic based on the finite-bias Landauer formula which accounts for the right- and left-going conduction modes dictated by the constriction's cross-section area and the voltage drop distribution along the filamentary path is reported. © 2012 American Institute of Physics.

Original language	English
Article number	012910
Journal	Applied Physics Letters
Volume	101
Issue number	1
DOIs	https://doi.org/10.1063/1.4733356
Publication status	Published - 2 Jul 2012

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title = "Nonlinear conductance quantization effects in CeO x/SiO 2-based resistive switching devices",

abstract = "The electron transport in W/CeO x/SiO 2/NiSi 2 resistive switching devices fabricated onto a p +-type Si substrate is investigated. It is shown that the structures exhibit bipolar switching with conductance values in the low resistance state (LRS) close to integer and half integer values of the quantum unit G 0 = 2e 2/h, e and h being the electron charge and Planck constant, respectively. This behavior is consistent with the so-called nonlinear conduction regime in quantum point-contacts. A simple model for the LRS current-voltage characteristic based on the finite-bias Landauer formula which accounts for the right- and left-going conduction modes dictated by the constriction's cross-section area and the voltage drop distribution along the filamentary path is reported. {\textcopyright} 2012 American Institute of Physics.",

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AU - Miranda, E.

AU - Kano, S.

AU - Dou, C.

AU - Kakushima, K.

AU - Sué, J.

AU - Iwai, H.

PY - 2012/7/2

Y1 - 2012/7/2

N2 - The electron transport in W/CeO x/SiO 2/NiSi 2 resistive switching devices fabricated onto a p +-type Si substrate is investigated. It is shown that the structures exhibit bipolar switching with conductance values in the low resistance state (LRS) close to integer and half integer values of the quantum unit G 0 = 2e 2/h, e and h being the electron charge and Planck constant, respectively. This behavior is consistent with the so-called nonlinear conduction regime in quantum point-contacts. A simple model for the LRS current-voltage characteristic based on the finite-bias Landauer formula which accounts for the right- and left-going conduction modes dictated by the constriction's cross-section area and the voltage drop distribution along the filamentary path is reported. © 2012 American Institute of Physics.

AB - The electron transport in W/CeO x/SiO 2/NiSi 2 resistive switching devices fabricated onto a p +-type Si substrate is investigated. It is shown that the structures exhibit bipolar switching with conductance values in the low resistance state (LRS) close to integer and half integer values of the quantum unit G 0 = 2e 2/h, e and h being the electron charge and Planck constant, respectively. This behavior is consistent with the so-called nonlinear conduction regime in quantum point-contacts. A simple model for the LRS current-voltage characteristic based on the finite-bias Landauer formula which accounts for the right- and left-going conduction modes dictated by the constriction's cross-section area and the voltage drop distribution along the filamentary path is reported. © 2012 American Institute of Physics.

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