Nondestructive multiple breakdown events in very thin SiO<inf>2</inf> films

J. Suñé, E. Farrés, I. Placencia, N. Barniol, F. Martín, X. Aymerich

Research output: Contribution to journalArticleResearchpeer-review

16 Citations (Scopus)

Abstract

Several breakdown events and multilevel current fluctuations have been observed when ultrathin SiO2 films are subjected to constant-voltage stresses. These breakdown events are sometimes reversible, and consist in a local change of conduction mechanism. This reversibility shows that no catastrophic thermal effects occur, and that the breakdown is only a local switching between two oxide conduction states of very different conductivities.
Original languageEnglish
Pages (from-to)128-130
JournalApplied Physics Letters
Volume55
DOIs
Publication statusPublished - 1 Dec 1989

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