Nondestructive multiple breakdown events in very thin SiO<inf>2</inf> films

J. Suñé; E. Farrés; I. Placencia; N. Barniol; F. Martín; X. Aymerich

doi:https://doi.org/10.1063/1.102396

Nondestructive multiple breakdown events in very thin SiO<inf>2</inf> films

J. Suñé, E. Farrés, I. Placencia, N. Barniol, F. Martín, X. Aymerich

Research output: Contribution to journal › Article › Research › peer-review

16 Citations (Scopus)

Abstract

Several breakdown events and multilevel current fluctuations have been observed when ultrathin SiO2 films are subjected to constant-voltage stresses. These breakdown events are sometimes reversible, and consist in a local change of conduction mechanism. This reversibility shows that no catastrophic thermal effects occur, and that the breakdown is only a local switching between two oxide conduction states of very different conductivities.

Original language	English
Pages (from-to)	128-130
Journal	Applied physics letters
Volume	55
DOIs	https://doi.org/10.1063/1.102396
Publication status	Published - 1 Dec 1989

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title = "Nondestructive multiple breakdown events in very thin SiO2 films",

abstract = "Several breakdown events and multilevel current fluctuations have been observed when ultrathin SiO2 films are subjected to constant-voltage stresses. These breakdown events are sometimes reversible, and consist in a local change of conduction mechanism. This reversibility shows that no catastrophic thermal effects occur, and that the breakdown is only a local switching between two oxide conduction states of very different conductivities.",

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AU - Farrés, E.

AU - Placencia, I.

AU - Barniol, N.

AU - Martín, F.

AU - Aymerich, X.

PY - 1989/12/1

Y1 - 1989/12/1

N2 - Several breakdown events and multilevel current fluctuations have been observed when ultrathin SiO2 films are subjected to constant-voltage stresses. These breakdown events are sometimes reversible, and consist in a local change of conduction mechanism. This reversibility shows that no catastrophic thermal effects occur, and that the breakdown is only a local switching between two oxide conduction states of very different conductivities.

AB - Several breakdown events and multilevel current fluctuations have been observed when ultrathin SiO2 films are subjected to constant-voltage stresses. These breakdown events are sometimes reversible, and consist in a local change of conduction mechanism. This reversibility shows that no catastrophic thermal effects occur, and that the breakdown is only a local switching between two oxide conduction states of very different conductivities.

U2 - https://doi.org/10.1063/1.102396

DO - https://doi.org/10.1063/1.102396

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EP - 130

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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