Abstract
Several breakdown events and multilevel current fluctuations have been observed when ultrathin SiO2 films are subjected to constant-voltage stresses. These breakdown events are sometimes reversible, and consist in a local change of conduction mechanism. This reversibility shows that no catastrophic thermal effects occur, and that the breakdown is only a local switching between two oxide conduction states of very different conductivities.
Original language | English |
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Pages (from-to) | 128-130 |
Journal | Applied physics letters |
Volume | 55 |
DOIs | |
Publication status | Published - 1 Dec 1989 |