Non-homogeneous conduction of conductive filaments in Ni/HfO<inf>2</inf>/Si resistive switching structures observed with CAFM

S. Claramunt, Q. Wu, M. Maestro, M. Porti, M. B. Gonzalez, J. Martin-Martinez, F. Campabadal, M. Nafría

Research output: Contribution to journalArticleResearchpeer-review

17 Citations (Scopus)

Abstract

© 2015 Elsevier B.V. All rights reserved. Conductive filaments (CFs) in Ni/HfO2/Si resistive switching structures are analysed at the nanoscale by means of Conductive Atomic Force Microscopy (CAFM). Differences in the CF conductivity are measured depending on the resistive state of the device. Moreover, for both resistance states, non-homogeneous conduction across the CF area is observed, in agreement with a tree-shaped CF.
Original languageEnglish
Pages (from-to)335-338
JournalMicroelectronic Engineering
Volume147
DOIs
Publication statusPublished - 17 May 2015

Keywords

  • CAFM
  • Metal-insulator-semiconductor (MIS)
  • Resistive switching

Fingerprint

Dive into the research topics of 'Non-homogeneous conduction of conductive filaments in Ni/HfO<inf>2</inf>/Si resistive switching structures observed with CAFM'. Together they form a unique fingerprint.

Cite this