© 2015 Elsevier B.V. All rights reserved. Conductive filaments (CFs) in Ni/HfO2/Si resistive switching structures are analysed at the nanoscale by means of Conductive Atomic Force Microscopy (CAFM). Differences in the CF conductivity are measured depending on the resistive state of the device. Moreover, for both resistance states, non-homogeneous conduction across the CF area is observed, in agreement with a tree-shaped CF.
- Metal-insulator-semiconductor (MIS)
- Resistive switching