Non-destructive approaches to interdiffusion phenomena across GaInAs/GaInAsP interfaces: photoluminescence vs. Raman

H. Peyre, F. Alsina, S. Juillaguet, E. Massone, J. Camassel, J. Pascual, R. W. Glew

Research output: Contribution to journalArticleResearchpeer-review

Abstract

We report a cross investigation, performed on the same series of samples, of the effect of interdiffusion on the photoluminescence and Raman spectra of a prototype structure made of a single GaInAs/GaInAsP quantum well (QW). Provided careful analyses are done, we find that both methods of investigation can be used with reasonable agreement. © 1993.
Original languageEnglish
Pages (from-to)73-76
JournalMaterials Science and Engineering B
Volume20
Issue number1-2
DOIs
Publication statusPublished - 30 Jun 1993

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