A new method for the characterization of random telegraph signals (RTSs) is presented. The method, which is based on the time lag plot, is illustrated using Monte Carlo generated RTS traces and applied to identify the contribution of defects in multilevel RTS measured in a pMOS transistor. The results show that the new method provides a powerful and easily implementable technique to obtain the parameters of the defects responsible of multilevel RTS, even when the background noise is relevant. © 1980-2012 IEEE.
- parameter extraction
- Random telegraph signals